BC856A-7-F

DIODES BC856A-7-F

Part Number:
BC856A-7-F
Manufacturer:
DIODES
Ventron No:
5508173-BC856A-7-F
Description:
PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
ECAD Model:
Datasheet:
BC856A-7-F

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Specifications
DIODES BC856A-7-F technical specifications, attributes, parameters and parts with similar specifications to DIODES BC856A-7-F.
  • Factory Lead Time
    19 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2005
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -65V
  • Max Power Dissipation
    300mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -100mA
  • Frequency
    200MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    BC856A
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    350mW
  • Power - Max
    300mW
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    200MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    65V
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    125 @ 2mA 5V
  • Current - Collector Cutoff (Max)
    15nA
  • Vce Saturation (Max) @ Ib, Ic
    650mV @ 5mA, 100mA
  • Collector Emitter Breakdown Voltage
    65V
  • Transition Frequency
    200MHz
  • Collector Emitter Saturation Voltage
    -650mV
  • Max Breakdown Voltage
    65V
  • Collector Base Voltage (VCBO)
    80V
  • Emitter Base Voltage (VEBO)
    5V
  • Height
    1mm
  • Length
    3.05mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
BC856A-7-F Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 125 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -650mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 200MHz.Single BJT transistor can take a breakdown input voltage of 65V volts.During maximum operation, collector current can be as low as 100mA volts.

BC856A-7-F Features
the DC current gain for this device is 125 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 200MHz


BC856A-7-F Applications
There are a lot of Diodes Incorporated
BC856A-7-F applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BC856A-7-F More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon
BC856A Series 65 V 300 mW PNP SMT Small Signal Transistor - SOT-23-3
Trans GP BJT PNP 65V 0.1A 350mW Automotive 3-Pin SOT-23 T/R
IC,BC856A-7-F,BIPOLAR TRANSIST OR PNP SOT-23 ROHS 3KTransistor, Pnp, Sot23; Transistor Polarity:Pnp; Collector Emitter Voltage Max:65V; Continuous Collector Current:100Ma; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:200Mhz Rohs Compliant: Yes |Diodes Inc. BC856A-7-F
TRANSISTOR, PNP, SOT23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -65V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 300mW; DC Collector Current: -100mA; DC Current Gain hFE: 200hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): -650mV; Current Ic Continuous a Max: -100mA; Gain Bandwidth ft Typ: 200MHz; Hfe Min: 125; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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