ON Semiconductor BC856BLT3

Name: BC856BLT3
Brand: ON Semiconductor
SKU: 2468089-BC856BLT3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC856BLT3

Manufacturer:: ON Semiconductor

Ventron No:: 2468089-BC856BLT3

Description:: TRANS PNP 65V 0.1A SOT-23

ECAD Model:

Datasheet:: BC856BLT3

Specifications

ON Semiconductor BC856BLT3 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC856BLT3.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2003
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.21.00.95
Subcategory
Other Transistors
Voltage - Rated DC
-65V
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
-100mA
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
650mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
220 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
65V
Current - Collector (Ic) (Max)
100mA
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-650mV
Collector Base Voltage (VCBO)
-50V
Emitter Base Voltage (VEBO)
5V
hFE Min
150
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead

Description

BC856BLT3 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 220 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -650mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 5mA, 100mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.

BC856BLT3 Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz

BC856BLT3 Applications
There are a lot of ON Semiconductor
BC856BLT3 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC856BLT3 More Descriptions

Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
Trans GP BJT PNP 65V 0.1A 3-Pin SOT-23 T/R
TRANS PNP 65V 0.1A SOT-23

Certification