Nexperia USA Inc. BC856B,215
- Part Number:
- BC856B,215
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2465502-BC856B,215
- Description:
- TRANS PNP 65V 0.1A SOT23
- Datasheet:
- BC856B,215
Nexperia USA Inc. BC856B,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC856B,215.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2001
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.21.00.95
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberBC856
- Pin Count3
- Number of Elements1
- ConfigurationSINGLE
- Power - Max250mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce220 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)65V
- Current - Collector (Ic) (Max)100mA
- Transition Frequency100MHz
- Frequency - Transition100MHz
- RoHS StatusROHS3 Compliant
BC856B,215 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 220 @ 2mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 5mA, 100mA.The part has a transition frequency of 100MHz.Device displays Collector Emitter Breakdown (65V maximal voltage).
BC856B,215 Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100MHz
BC856B,215 Applications
There are a lot of Nexperia USA Inc.
BC856B,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 220 @ 2mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 5mA, 100mA.The part has a transition frequency of 100MHz.Device displays Collector Emitter Breakdown (65V maximal voltage).
BC856B,215 Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100MHz
BC856B,215 Applications
There are a lot of Nexperia USA Inc.
BC856B,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC856B,215 More Descriptions
Bipolar junction transistor, PNP, -100 mA, -65 ## Fehler ##, SMD, SOT-23, BC856B,215
Transistor General Purpose BJT PNP 65 Volt 0.2 Amp 3-Pin TO-236AB Tape and Reel
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
Trans GP BJT PNP 65V 0.1A 250mW Automotive 3-Pin SOT-23 T/R
BC856 Series 65V 100 mA 250 mW SMT PNP General Purpose Transistor - SOT-23
vp_BC856_BC857_BC858 - 65 V, 100 mA PNP general-purpose transistors
Bipolar Transistors - BJT PNP GP 100MA 65V
TRANSISTOR, PNP, -65V,SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-65V; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:220; Operating Temperature Min:-65°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
Transistor General Purpose BJT PNP 65 Volt 0.2 Amp 3-Pin TO-236AB Tape and Reel
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
Trans GP BJT PNP 65V 0.1A 250mW Automotive 3-Pin SOT-23 T/R
BC856 Series 65V 100 mA 250 mW SMT PNP General Purpose Transistor - SOT-23
vp_BC856_BC857_BC858 - 65 V, 100 mA PNP general-purpose transistors
Bipolar Transistors - BJT PNP GP 100MA 65V
TRANSISTOR, PNP, -65V,SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-65V; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:220; Operating Temperature Min:-65°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
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