Nexperia USA Inc. BC856AW,135
- Part Number:
- BC856AW,135
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 3069054-BC856AW,135
- Description:
- TRANS PNP 65V 0.1A SOT323
- Datasheet:
- BC856AW,135
Nexperia USA Inc. BC856AW,135 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC856AW,135.
- Factory Lead Time4 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2009
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Max Power Dissipation200mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBC856
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation200mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product100MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)65V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce125 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage65V
- Transition Frequency100MHz
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)5V
- Collector-Base Capacitance-Max5pF
- RoHS StatusROHS3 Compliant
BC856AW,135 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 125 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
BC856AW,135 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC856AW,135 Applications
There are a lot of Nexperia USA Inc.
BC856AW,135 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 125 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
BC856AW,135 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC856AW,135 Applications
There are a lot of Nexperia USA Inc.
BC856AW,135 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC856AW,135 More Descriptions
BC856W; BC857W; BC858W - 65 V, 100 mA PNP general-purpose transistors
Transistor, Bipolar Rohs Compliant: Yes |Nexperia BC856AW,135
Trans GP BJT PNP 65V 0.1A 3-Pin SC-70 T/R
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistor, Bipolar Rohs Compliant: Yes |Nexperia BC856AW,135
Trans GP BJT PNP 65V 0.1A 3-Pin SC-70 T/R
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
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