Nexperia USA Inc. BC856AW,115

Name: BC856AW,115
Brand: Nexperia USA Inc.
SKU: 2845888-BC856AW,115
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC856AW,115

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2845888-BC856AW,115

Description:: TRANS PNP 65V 0.1A SOT323

ECAD Model:

Datasheet:: BC856AW,115

Specifications

Nexperia USA Inc. BC856AW,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC856AW,115.

Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
100MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BC856
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
200mW
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
65V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
125 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
65V
Transition Frequency
100MHz
Max Breakdown Voltage
65V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
Collector-Base Capacitance-Max
5pF
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BC856AW,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 125 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 65V volts that it can take.Collector current can be as low as 100mA volts at its maximum.

BC856AW,115 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BC856AW,115 Applications
There are a lot of Nexperia USA Inc.
BC856AW,115 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC856AW,115 More Descriptions

BC856 Series 65 V 100 mA 250 mW SMT PNP General Purpose Transistor -SOT-23
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 65V 0.1A 200mW Automotive 3-Pin SC-70 T/R
BC856W; BC857W; BC858W - 65 V, 100 mA PNP general-purpose transistors

Certification