NXP USA Inc. BC856AT,115
- Part Number:
- BC856AT,115
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2469520-BC856AT,115
- Description:
- TRANS PNP 65V 0.1A SC-75
- Datasheet:
- BC856T,857T Series
NXP USA Inc. BC856AT,115 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BC856AT,115.
- Mounting TypeSurface Mount
- Package / CaseSC-75, SOT-416
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2009
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBC856
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power - Max150mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce125 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)65V
- Current - Collector (Ic) (Max)100mA
- Transition Frequency100MHz
- Frequency - Transition100MHz
- Power Dissipation-Max (Abs)0.15W
- RoHS StatusROHS3 Compliant
BC856AT,115 Overview
This device has a DC current gain of 125 @ 2mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 400mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 100MHz.Collector Emitter Breakdown occurs at 65VV - Maximum voltage.
BC856AT,115 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
a transition frequency of 100MHz
BC856AT,115 Applications
There are a lot of NXP USA Inc.
BC856AT,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 125 @ 2mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 400mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 100MHz.Collector Emitter Breakdown occurs at 65VV - Maximum voltage.
BC856AT,115 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
a transition frequency of 100MHz
BC856AT,115 Applications
There are a lot of NXP USA Inc.
BC856AT,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC856AT,115 More Descriptions
Bipolar (Bjt) Single Transistor, Pnp, -65 V, 100 Mhz, 150 Mw, -100 Ma, 125
PNP general purpose Transistor in an SC-75 (SOT416) plastic package
Trans GP BJT PNP 65V 0.1A 3-Pin SC-75 T/R
PNP general purpose Transistor in an SC-75 (SOT416) plastic package
Trans GP BJT PNP 65V 0.1A 3-Pin SC-75 T/R
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