BC856AT,115

NXP USA Inc. BC856AT,115

Part Number:
BC856AT,115
Manufacturer:
NXP USA Inc.
Ventron No:
2469520-BC856AT,115
Description:
TRANS PNP 65V 0.1A SC-75
ECAD Model:
Datasheet:
BC856T,857T Series

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Specifications
NXP USA Inc. BC856AT,115 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BC856AT,115.
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-75, SOT-416
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    Automotive, AEC-Q101
  • Published
    2009
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    BC856
  • Pin Count
    3
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power - Max
    150mW
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    125 @ 2mA 5V
  • Current - Collector Cutoff (Max)
    15nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    400mV @ 5mA, 100mA
  • Voltage - Collector Emitter Breakdown (Max)
    65V
  • Current - Collector (Ic) (Max)
    100mA
  • Transition Frequency
    100MHz
  • Frequency - Transition
    100MHz
  • Power Dissipation-Max (Abs)
    0.15W
  • RoHS Status
    ROHS3 Compliant
Description
BC856AT,115 Overview
This device has a DC current gain of 125 @ 2mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 400mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 100MHz.Collector Emitter Breakdown occurs at 65VV - Maximum voltage.

BC856AT,115 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
a transition frequency of 100MHz


BC856AT,115 Applications
There are a lot of NXP USA Inc.
BC856AT,115 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BC856AT,115 More Descriptions
Bipolar (Bjt) Single Transistor, Pnp, -65 V, 100 Mhz, 150 Mw, -100 Ma, 125
PNP general purpose Transistor in an SC-75 (SOT416) plastic package
Trans GP BJT PNP 65V 0.1A 3-Pin SC-75 T/R
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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