Nexperia USA Inc. BC856A,215
- Part Number:
- BC856A,215
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2465597-BC856A,215
- Description:
- TRANS PNP 65V 0.1A SOT23
- Datasheet:
- BC856A,215
Nexperia USA Inc. BC856A,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC856A,215.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2009
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.21.00.95
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBC856
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power - Max250mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce125 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)65V
- Current - Collector (Ic) (Max)100mA
- Transition Frequency100MHz
- Frequency - Transition100MHz
- VCEsat-Max0.65 V
- RoHS StatusROHS3 Compliant
BC856A,215 Overview
This device has a DC current gain of 125 @ 2mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 100MHz.Detection of Collector Emitter Breakdown at 65V maximal voltage is present.
BC856A,215 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100MHz
BC856A,215 Applications
There are a lot of Nexperia USA Inc.
BC856A,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 125 @ 2mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 100MHz.Detection of Collector Emitter Breakdown at 65V maximal voltage is present.
BC856A,215 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100MHz
BC856A,215 Applications
There are a lot of Nexperia USA Inc.
BC856A,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC856A,215 More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
vp_BC856_BC857_BC858 - 65 V, 100 mA PNP general-purpose transistors
Trans GP BJT PNP 65V 0.1A 250mW Automotive 3-Pin TO-236AB T/R
NEXPERIA - BC856A,215 - TRANSISTOR, PNP, -65V, -100MA, SOT-23-3
65V 250mW 100mA 125@2mA,5V 100MHz 250mV@100mA,5mA PNP 150¡æ@(Tj) SOT-23 Bipolar Transistors - BJT ROHS
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
BIPOLAR TRANSISTOR, PNP, -65V, -100MA, 3-SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-65V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:250
Bipolar Transistor, Pnp, -65V, -100Ma, 3-Sot-23, Full Reel; Transistor Polarity:Pnp; Collector Emitter Voltage Max:65V; Continuous Collector Current:100Ma; Power Dissipation:250Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pinsrohs Compliant: Yes |Nexperia BC856A,215.
vp_BC856_BC857_BC858 - 65 V, 100 mA PNP general-purpose transistors
Trans GP BJT PNP 65V 0.1A 250mW Automotive 3-Pin TO-236AB T/R
NEXPERIA - BC856A,215 - TRANSISTOR, PNP, -65V, -100MA, SOT-23-3
65V 250mW 100mA 125@2mA,5V 100MHz 250mV@100mA,5mA PNP 150¡æ@(Tj) SOT-23 Bipolar Transistors - BJT ROHS
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
BIPOLAR TRANSISTOR, PNP, -65V, -100MA, 3-SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-65V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:250
Bipolar Transistor, Pnp, -65V, -100Ma, 3-Sot-23, Full Reel; Transistor Polarity:Pnp; Collector Emitter Voltage Max:65V; Continuous Collector Current:100Ma; Power Dissipation:250Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pinsrohs Compliant: Yes |Nexperia BC856A,215.
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