ON Semiconductor BC850CLT1
- Part Number:
- BC850CLT1
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2466927-BC850CLT1
- Description:
- TRANS NPN 45V 0.1A SOT23
- Datasheet:
- BC846ALT1
ON Semiconductor BC850CLT1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC850CLT1.
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations3
- Terminal FinishTIN LEAD
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)240
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max225mW
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce420 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- JEDEC-95 CodeTO-236AB
- Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)45V
- Current - Collector (Ic) (Max)100mA
- Transition Frequency100MHz
- Frequency - Transition100MHz
- RoHS StatusNon-RoHS Compliant
BC850CLT1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 420 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.A transition frequency of 100MHz is present in the part.A 45V maximal voltage - Collector Emitter Breakdown is present in the device.
BC850CLT1 Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
a transition frequency of 100MHz
BC850CLT1 Applications
There are a lot of Rochester Electronics, LLC
BC850CLT1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 420 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.A transition frequency of 100MHz is present in the part.A 45V maximal voltage - Collector Emitter Breakdown is present in the device.
BC850CLT1 Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
a transition frequency of 100MHz
BC850CLT1 Applications
There are a lot of Rochester Electronics, LLC
BC850CLT1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC850CLT1 More Descriptions
Tape & Reel (TR) Surface Mount NPN Single Bipolar (BJT) Transistor 420 @ 2mA 5V 15nA ICBO 225mW 100MHz
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
TRANS GP BJT NPN 45V 0.1A 3PIN SOT-23 - Tape and Reel
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
TRANS GP BJT NPN 45V 0.1A 3PIN SOT-23 - Tape and Reel
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