Fairchild/ON Semiconductor BC848CMTF

Name: BC848CMTF
Brand: Fairchild/ON Semiconductor
SKU: 2463146-BC848CMTF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC848CMTF

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2463146-BC848CMTF

Description:: TRANS NPN 30V 0.1A SOT23

ECAD Model:

Datasheet:: BC846-BC850

Specifications

Fairchild/ON Semiconductor BC848CMTF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC848CMTF.

Lifecycle Status
LAST SHIPMENTS (Last Updated: 6 days ago)
Factory Lead Time
13 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
30V
Max Power Dissipation
310mW
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
100mA
Frequency
300MHz
Base Part Number
BC848
Number of Elements
1
Element Configuration
Single
Power Dissipation
310mW
Transistor Application
SWITCHING
Gain Bandwidth Product
300MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
420 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
30V
Transition Frequency
300MHz
Collector Emitter Saturation Voltage
200mV
Max Breakdown Voltage
30V
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
5V
hFE Min
110
Height
930μm
Length
2.92mm
Width
1.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

BC848CMTF Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 200mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).300MHz is present in the transition frequency.An input voltage of 30V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.

BC848CMTF Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 300MHz

BC848CMTF Applications
There are a lot of ON Semiconductor
BC848CMTF applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC848CMTF More Descriptions

BC848 Series 30 V CE Breakdown .1 A NPN Epitaxial Silicon Transistor - SOT-23
Trans GP BJT NPN 30V 0.1A 3-Pin SOT-23 T/R / TRANS NPN 30V 0.1A SOT23
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
Transistor; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:30V; Continuous Collector Current, Ic:100mA; Collector Emitter Saturation Voltage, Vce(sat):0.2V; Power Dissipation, Pd:310mW ;RoHS Compliant: Yes

Certification