ON Semiconductor BC848CLT1G
- Part Number:
- BC848CLT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2845153-BC848CLT1G
- Description:
- TRANS NPN 30V 0.1A SOT23
- Datasheet:
- BC848CLT1G
ON Semiconductor BC848CLT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC848CLT1G.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time4 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC30V
- Max Power Dissipation300mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation300mW
- Gain Bandwidth Product100MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce420 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage30V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage600mV
- Max Breakdown Voltage30V
- Collector Base Voltage (VCBO)30V
- Emitter Base Voltage (VEBO)5V
- hFE Min420
- Height940μm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BC848CLT1G Overview
This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 600mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 100mA.In this part, there is a transition frequency of 100MHz.As a result, it can handle voltages as low as 30V volts.The maximum collector current is 100mA volts.
BC848CLT1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC848CLT1G Applications
There are a lot of ON Semiconductor
BC848CLT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 600mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 100mA.In this part, there is a transition frequency of 100MHz.As a result, it can handle voltages as low as 30V volts.The maximum collector current is 100mA volts.
BC848CLT1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC848CLT1G Applications
There are a lot of ON Semiconductor
BC848CLT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC848CLT1G More Descriptions
Transistor: NPN; bipolar; 30V; 0.1A; 225mW; -55 150 deg.C; SMD; SOT23
Trans GP BJT NPN 30V 0.1A 300mW Automotive 3-Pin SOT-23 T/R
30V 300mW 420@2mA,5V 100mA NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
ON Semi BC848CLT1G NPN Bipolar Transistor, 0.1 A, 30 V, 3-Pin SOT-23 | ON Semiconductor BC848CLT1G
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
BC848CLT1G Series NPN 30 V 100 mA SMT General Purpose Transistor - SOT-23
100 mA, 30 V, NPN Bipolar Junction Transistor
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistor, NPN, 30V, 100MA, SOT-23-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:100MHz; Power
Trans GP BJT NPN 30V 0.1A 300mW Automotive 3-Pin SOT-23 T/R
30V 300mW 420@2mA,5V 100mA NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
ON Semi BC848CLT1G NPN Bipolar Transistor, 0.1 A, 30 V, 3-Pin SOT-23 | ON Semiconductor BC848CLT1G
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
BC848CLT1G Series NPN 30 V 100 mA SMT General Purpose Transistor - SOT-23
100 mA, 30 V, NPN Bipolar Junction Transistor
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistor, NPN, 30V, 100MA, SOT-23-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:100MHz; Power
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