Diodes Incorporated BC848C-7-F
- Part Number:
- BC848C-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2463165-BC848C-7-F
- Description:
- TRANS NPN 30V 0.1A SOT23-3
- Datasheet:
- BC848C-7-F
Diodes Incorporated BC848C-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BC848C-7-F.
- Factory Lead Time15 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- Max Power Dissipation300mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency300MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBC848C
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation310mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product300MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce420 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA
- Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage30V
- Transition Frequency300MHz
- Collector Emitter Saturation Voltage90mV
- Max Breakdown Voltage30V
- Collector Base Voltage (VCBO)30V
- Emitter Base Voltage (VEBO)5V
- hFE Min420
- Max Junction Temperature (Tj)150°C
- Continuous Collector Current100mA
- Height1.1mm
- Length3.05mm
- Width1.4mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BC848C-7-F Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 420 @ 2mA 5V.With a collector emitter saturation voltage of 90mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 300MHz is present in the part.There is a breakdown input voltage of 30V volts that it can take.Collector current can be as low as 200mA volts at its maximum.
BC848C-7-F Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 90mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 300MHz
BC848C-7-F Applications
There are a lot of Diodes Incorporated
BC848C-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 420 @ 2mA 5V.With a collector emitter saturation voltage of 90mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 300MHz is present in the part.There is a breakdown input voltage of 30V volts that it can take.Collector current can be as low as 200mA volts at its maximum.
BC848C-7-F Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 90mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 300MHz
BC848C-7-F Applications
There are a lot of Diodes Incorporated
BC848C-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC848C-7-F More Descriptions
BC848B Series NPN 30 V 300 mW Small Signal Surface Mount Transistor-SOT-23-3
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
DIODES INC. - BC848C-7-F - TRANSISTOR, NPN, 30V, 100mA, 300mW, SOT-23
Trans GP BJT NPN 30V 0.1A 350mW 3-Pin SOT-23 T/R
Transistor, NPN, SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:300MHz; Power Dissipation Pd:300mW;
Transistor, Npn, 30V, 100Ma, 300Mw, Sot-23; Transistor Polarity:Npn; Collector Emitter Voltage Max:30V; Continuous Collector Current:100Ma; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Diodes Inc. BC848C-7-F
TRANSISTOR, NPN, SOT23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 300mW; DC Collector Current: 100mA; DC Current Gain hFE: 600hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 600mV; Current Ic Continuous a Max: 100mA; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 420; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
DIODES INC. - BC848C-7-F - TRANSISTOR, NPN, 30V, 100mA, 300mW, SOT-23
Trans GP BJT NPN 30V 0.1A 350mW 3-Pin SOT-23 T/R
Transistor, NPN, SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:300MHz; Power Dissipation Pd:300mW;
Transistor, Npn, 30V, 100Ma, 300Mw, Sot-23; Transistor Polarity:Npn; Collector Emitter Voltage Max:30V; Continuous Collector Current:100Ma; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Diodes Inc. BC848C-7-F
TRANSISTOR, NPN, SOT23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 300mW; DC Collector Current: 100mA; DC Current Gain hFE: 600hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 600mV; Current Ic Continuous a Max: 100mA; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 420; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal
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