BC848BT116

Rohm Semiconductor BC848BT116

Part Number:
BC848BT116
Manufacturer:
Rohm Semiconductor
Ventron No:
2465026-BC848BT116
Description:
TRANS NPN 30V 0.1A SST3
ECAD Model:
Datasheet:
BC848BT116

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Specifications
Rohm Semiconductor BC848BT116 technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor BC848BT116.
  • Factory Lead Time
    13 Weeks
  • Contact Plating
    Copper, Silver, Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2005
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • HTS Code
    8541.21.00.75
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    30V
  • Max Power Dissipation
    350mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    100mA
  • Time@Peak Reflow Temperature-Max (s)
    10
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Transistor Application
    AMPLIFIER
  • Gain Bandwidth Product
    200MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    30V
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 2mA 5V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    600mV @ 5mA, 100mA
  • Collector Emitter Breakdown Voltage
    30V
  • Transition Frequency
    200MHz
  • Collector Emitter Saturation Voltage
    600mV
  • Collector Base Voltage (VCBO)
    30V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    200
  • Continuous Collector Current
    100mA
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
BC848BT116 Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 600mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.Single BJT transistor is essential to maintain the continuous collector voltage at 100mA to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 100mA current rating.As a result, the part has a transition frequency of 200MHz.In extreme cases, the collector current can be as low as 100mA volts.

BC848BT116 Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 200MHz


BC848BT116 Applications
There are a lot of ROHM Semiconductor
BC848BT116 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BC848BT116 More Descriptions
Trans GP BJT NPN 30V 0.1A 350mW 3-Pin SOT-23 T/R
TRANS NPN 30V 0.1A SST3
French Electronic Distributor since 1988
OEMs, CMs ONLY (NO BROKERS)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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