ON Semiconductor BC847CTT1G

Name: BC847CTT1G
Brand: ON Semiconductor
SKU: 2469129-BC847CTT1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC847CTT1G

Manufacturer:: ON Semiconductor

Ventron No:: 2469129-BC847CTT1G

Description:: TRANS NPN 45V 0.1A SC75-3

ECAD Model:

Datasheet:: BC847CTT1G

Specifications

ON Semiconductor BC847CTT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC847CTT1G.

Mounting Type
Surface Mount
Package / Case
SC-75, SOT-416
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
3
JESD-30 Code
R-PDSO-G3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
200mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
420 @ 2mA 5V
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
100mA
Transition Frequency
100MHz
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant

Description

BC847CTT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 420 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.A transition frequency of 100MHz is present in the part.A 45V maximal voltage - Collector Emitter Breakdown is present in the device.

BC847CTT1G Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
a transition frequency of 100MHz

BC847CTT1G Applications
There are a lot of Rochester Electronics, LLC
BC847CTT1G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC847CTT1G More Descriptions

Cut Tape (CT) Surface Mount NPN Single Bipolar (BJT) Transistor 420 @ 2mA 5V 100mA 200mW 100MHz
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 45V 0.1A Automotive 3-Pin SOT-416 T/R
BIPOLAR TRANSISTOR, NPN, 45V; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:45V; Transition Frequency Typ, ft:100MHz; Power Dissipation, Pd:200mW; Collector Emitter Saturation Voltage, Vce(sat):0.25V ;RoHS Compliant: Yes

Certification