Fairchild/ON Semiconductor BC847CMTF

Name: BC847CMTF
Brand: Fairchild/ON Semiconductor
SKU: 2463719-BC847CMTF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC847CMTF

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2463719-BC847CMTF

Description:: TRANS NPN 45V 0.1A SOT23

ECAD Model:

Datasheet:: BC846-BC850

Specifications

Fairchild/ON Semiconductor BC847CMTF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC847CMTF.

Lifecycle Status
LAST SHIPMENTS (Last Updated: 5 days ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
45V
Max Power Dissipation
310mW
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
100mA
Frequency
300MHz
Base Part Number
BC847
Number of Elements
1
Element Configuration
Single
Power Dissipation
310mW
Transistor Application
SWITCHING
Gain Bandwidth Product
300MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
420 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
300MHz
Collector Emitter Saturation Voltage
200mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
6V
hFE Min
110
Height
930μm
Length
2.92mm
Width
1.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

BC847CMTF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 420 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 200mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 100mA volts.

BC847CMTF Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz

BC847CMTF Applications
There are a lot of ON Semiconductor
BC847CMTF applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC847CMTF More Descriptions

BC847 Series 45 V CE Breakdown .1 A NPN Epitaxial Silicon Transistor - SOT-23
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 45V 0.1A 3-Pin SOT-23 T/R - Tape and Reel
Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:45V; Transition Frequency Typ, ft:300MHz; Power Dissipation, Pd:310mW; DC Collector Current:100mA; DC Current Gain Max (hfe):110; No. of Pins:3 ;RoHS Compliant: Yes

Certification