BC847BW,115

Nexperia USA Inc. BC847BW,115

Part Number:
BC847BW,115
Manufacturer:
Nexperia USA Inc.
Ventron No:
3068656-BC847BW,115
Description:
TRANS NPN 45V 0.1A SOT323
ECAD Model:
Datasheet:
BC847BW,115

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Specifications
Nexperia USA Inc. BC847BW,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC847BW,115.
  • Factory Lead Time
    4 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-70, SOT-323
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    Automotive, AEC-Q101
  • Published
    2008
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • HTS Code
    8541.21.00.95
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Base Part Number
    BC847
  • Pin Count
    3
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power - Max
    200mW
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 2mA 5V
  • Current - Collector Cutoff (Max)
    15nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    400mV @ 5mA, 100mA
  • Voltage - Collector Emitter Breakdown (Max)
    45V
  • Current - Collector (Ic) (Max)
    100mA
  • Transition Frequency
    100MHz
  • Frequency - Transition
    100MHz
  • RoHS Status
    ROHS3 Compliant
Description
BC847BW,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 100mA.Parts of this part have transition frequencies of 100MHz.This device displays a 45V maximum voltage - Collector Emitter Breakdown.

BC847BW,115 Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
a transition frequency of 100MHz


BC847BW,115 Applications
There are a lot of Nexperia USA Inc.
BC847BW,115 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BC847BW,115 More Descriptions
Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 200mW Surface Mount SOT-323
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
vp_BC847xW_SER - 45 V, 100 mA NPN general-purpose transistors
Trans GP BJT NPN 45V 0.1A 200mW Automotive 3-Pin SC-70 T/R
Transistor, Bipolar, Npn, 45V, 100Ma, Sot-323-3, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:45V; Continuous Collector Current:100Ma; Power Dissipation:200Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pinsrohs Compliant: Yes |Nexperia BC847BW,115.
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 45 / DC Current Gain (hFE) = 450 / Collector-Base Voltage (Vcbo) V = 50 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 200 / Package Type = SOT-323 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 400 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 900
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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