ON Semiconductor BC847BTT1

Name: BC847BTT1
Brand: ON Semiconductor
SKU: 2466887-BC847BTT1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC847BTT1

Manufacturer:: ON Semiconductor

Ventron No:: 2466887-BC847BTT1

Description:: TRANS NPN 45V 0.1A SC75-3

ECAD Model:

Datasheet:: BC847BTT1

Specifications

ON Semiconductor BC847BTT1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC847BTT1.

Lifecycle Status
LAST SHIPMENTS (Last Updated: 4 days ago)
Mounting Type
Surface Mount
Package / Case
SC-75, SOT-416
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Voltage - Rated DC
45V
Max Power Dissipation
225mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
100mA
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
BC847*TT
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
300mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
100MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
600mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
600mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
6V
hFE Min
200
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead

Description

BC847BTT1 Overview
This device has a DC current gain of 200 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 600mV.A VCE saturation (Max) of 600mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 100mA volts is possible.

BC847BTT1 Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz

BC847BTT1 Applications
There are a lot of ON Semiconductor
BC847BTT1 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC847BTT1 More Descriptions

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
TRANS NPN 45V 0.1A SC75 SOT416
Bipolar Transistor; Transistor Polarity:N Channel; Power Dissipation, Pd:0.3W; DC Current Gain Min (hfe):200; C-E Breakdown Voltage:45V; Collector Current:0.1A; DC Current Gain Max (hfe):450; Leaded Process Compatible:No RoHS Compliant: No

Certification