Nexperia USA Inc. BC847BMB,315

Name: BC847BMB,315
Brand: Nexperia USA Inc.
SKU: 2465275-BC847BMB,315
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC847BMB,315

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2465275-BC847BMB,315

Description:: TRANS NPN 45V 0.1A SOT883

ECAD Model:

Datasheet:: BC847BMB,315

Specifications

Nexperia USA Inc. BC847BMB,315 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC847BMB,315.

Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-XFDFN
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Published
2011
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Max Power Dissipation
250mW
Terminal Position
BOTTOM
Frequency
100MHz
Base Part Number
BC847
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
250mW
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
200mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
6V
hFE Min
200
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

BC847BMB,315 Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 200mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 5mA, 100mA.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.

BC847BMB,315 Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

BC847BMB,315 Applications
There are a lot of Nexperia USA Inc.
BC847BMB,315 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC847BMB,315 More Descriptions

BC847xMB Series 45 V 100 mA 250 mW NPN General-Purpose Transistor - SOT-883B
Trans GP BJT NPN 45V 0.1A 250mW Automotive 3-Pin DFN-B T/R
TRANS, NPN, 45V, 0.1A, SOT883B; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 250mW; DC Collector Current: 100mA; DC Current Gain hFE: 200hFE; Transis
Transistor, Npn, 45V, 0.1A, Sot883B; Transistor Polarity:Npn; Collector Emitter Voltage Max:45V; Continuous Collector Current:100Ma; Power Dissipation:250Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Nexperia BC847BMB,315

Certification