Diodes Incorporated BC847BFA-7B

Name: BC847BFA-7B
Brand: Diodes Incorporated
SKU: 2464694-BC847BFA-7B
Availability: InStock
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Part Number:: BC847BFA-7B

Manufacturer:: Diodes Incorporated

Ventron No:: 2464694-BC847BFA-7B

Description:: TRANS NPN 45V 0.1A X2-DFN0806-3

ECAD Model:

Datasheet:: BC847BFA-7B

Specifications

Diodes Incorporated BC847BFA-7B technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BC847BFA-7B.

Factory Lead Time
15 Weeks
Contact Plating
Gold
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-XFDFN
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2013
JESD-609 Code
e4
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Max Power Dissipation
435mW
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Number of Elements
1
Element Configuration
Single
Power Dissipation
435mW
Case Connection
COLLECTOR
Gain Bandwidth Product
170MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
150V
Transition Frequency
170MHz
Collector Emitter Saturation Voltage
122mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
6V
hFE Min
200
Max Junction Temperature (Tj)
150°C
Height
400μm
Length
650μm
Width
850μm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BC847BFA-7B Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.The collector emitter saturation voltage is 122mV, which allows for maximum design flexibility.When VCE saturation is 300mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 170MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.

BC847BFA-7B Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 122mV
the vce saturation(Max) is 300mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 170MHz

BC847BFA-7B Applications
There are a lot of Diodes Incorporated
BC847BFA-7B applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC847BFA-7B More Descriptions

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Certification