Diodes Incorporated BC847BFA-7B
- Part Number:
- BC847BFA-7B
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2464694-BC847BFA-7B
- Description:
- TRANS NPN 45V 0.1A X2-DFN0806-3
- Datasheet:
- BC847BFA-7B
Diodes Incorporated BC847BFA-7B technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BC847BFA-7B.
- Factory Lead Time15 Weeks
- Contact PlatingGold
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case3-XFDFN
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2013
- JESD-609 Codee4
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- Max Power Dissipation435mW
- Terminal FormNO LEAD
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation435mW
- Case ConnectionCOLLECTOR
- Gain Bandwidth Product170MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)45V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage150V
- Transition Frequency170MHz
- Collector Emitter Saturation Voltage122mV
- Max Breakdown Voltage45V
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)6V
- hFE Min200
- Max Junction Temperature (Tj)150°C
- Height400μm
- Length650μm
- Width850μm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BC847BFA-7B Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.The collector emitter saturation voltage is 122mV, which allows for maximum design flexibility.When VCE saturation is 300mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 170MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BC847BFA-7B Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 122mV
the vce saturation(Max) is 300mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 170MHz
BC847BFA-7B Applications
There are a lot of Diodes Incorporated
BC847BFA-7B applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.The collector emitter saturation voltage is 122mV, which allows for maximum design flexibility.When VCE saturation is 300mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 170MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BC847BFA-7B Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 122mV
the vce saturation(Max) is 300mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 170MHz
BC847BFA-7B Applications
There are a lot of Diodes Incorporated
BC847BFA-7B applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC847BFA-7B More Descriptions
Bipolar Transistors - BJT 45V NPN SM Trans 435mW 100mA
100mA 45V NPN Signal Transistor DFN0806 | Diodes Inc BC847BFA-7B
Trans GP BJT NPN 45V 0.1A 435mW 3-Pin X2-DFN T/R
Transistor, NPN, 45V, 0.1A, 150DEG C, 0.435W;
General Purpose Transistor X2-Dfn0806-3 T&r 10K
TRANS NPN 45V 0.1A X2-DFN0806-3
NPN, 45V, 0.1A, DFN0806-3,170MHzDiodes Inc SCT
100mA 45V NPN Signal Transistor DFN0806 | Diodes Inc BC847BFA-7B
Trans GP BJT NPN 45V 0.1A 435mW 3-Pin X2-DFN T/R
Transistor, NPN, 45V, 0.1A, 150DEG C, 0.435W;
General Purpose Transistor X2-Dfn0806-3 T&r 10K
TRANS NPN 45V 0.1A X2-DFN0806-3
NPN, 45V, 0.1A, DFN0806-3,170MHzDiodes Inc SCT
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