Diodes Incorporated BC847B-7-F

Name: BC847B-7-F
Brand: Diodes Incorporated
SKU: 3585288-BC847B-7-F
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC847B-7-F

Manufacturer:: Diodes Incorporated

Ventron No:: 3585288-BC847B-7-F

Description:: TRANS NPN 45V 0.1A SOT23-3

ECAD Model:

Datasheet:: BC847B-7-F

Specifications

Diodes Incorporated BC847B-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BC847B-7-F.

Factory Lead Time
19 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
300MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BC847
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
310mW
Transistor Application
SWITCHING
Gain Bandwidth Product
300MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Current - Collector (Ic) (Max)
100mA
Transition Frequency
300MHz
Collector Emitter Saturation Voltage
90mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
6V
hFE Min
200
Max Junction Temperature (Tj)
150°C
Height
1.1mm
Length
3.05mm
Width
1.4mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BC847B-7-F Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.The collector emitter saturation voltage is 90mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 300MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 200mA volts can be achieved.

BC847B-7-F Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 90mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz

BC847B-7-F Applications
There are a lot of Diodes Incorporated
BC847B-7-F applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC847B-7-F More Descriptions

DIODES INC. - BC847B-7-F - Bipolar (BJT) Single Transistor, NPN, 45 V, 300 MHz, 300 mW, 100 mA, 330 hFE
Trans GP BJT NPN 45V 0.1A 350mW Automotive 3-Pin SOT-23 T/R
BC847B Series NPN 45 V 300 mW Small Signal Transisitor Surface Mount -SOT-23-3
45V 300mW 200@2mA,5V 100mA NPN SOT-23 Bipolar Transistors - BJT ROHS
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
Transistor NPN 0.1A 45V 200hfe SOT23 | Diodes Inc BC847B-7-F
Transistor, NPN, SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:300MHz; Power Dissipation Pd:300mW;
TRANSISTOR, NPN, SOT23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 300mW; DC Collector Current: 100mA; DC Current Gain hFE: 330hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 600mV; Current Ic Continuous a Max: 100mA; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 200; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal

Certification