Nexperia USA Inc. BC847AW,135
- Part Number:
- BC847AW,135
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 3069031-BC847AW,135
- Description:
- TRANS NPN 45V 0.1A SOT323
- Datasheet:
- BC847AW,135
Nexperia USA Inc. BC847AW,135 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC847AW,135.
- Factory Lead Time4 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2014
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Max Power Dissipation200mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberBC847
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation200mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product100MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)45V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce110 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage45V
- Transition Frequency100MHz
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)6V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
BC847AW,135 Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.100MHz is present in the transition frequency.Maximum collector currents can be below 100mA volts.
BC847AW,135 Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847AW,135 Applications
There are a lot of Nexperia USA Inc.
BC847AW,135 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 110 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.100MHz is present in the transition frequency.Maximum collector currents can be below 100mA volts.
BC847AW,135 Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847AW,135 Applications
There are a lot of Nexperia USA Inc.
BC847AW,135 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC847AW,135 More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 45V 0.1A Automotive 3-Pin SC-70 T/R
Transistor, Bipolar Rohs Compliant: Yes |Nexperia BC847AW,135
vp_BC847xW_SER - 45 V, 100 mA NPN general-purpose transistors
BC847AW Series 45 V 100 mA NPN Surface Mount Silicon Transistor - SOT-323
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Trans GP BJT NPN 45V 0.1A Automotive 3-Pin SC-70 T/R
Transistor, Bipolar Rohs Compliant: Yes |Nexperia BC847AW,135
vp_BC847xW_SER - 45 V, 100 mA NPN general-purpose transistors
BC847AW Series 45 V 100 mA NPN Surface Mount Silicon Transistor - SOT-323
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
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