BC847AW,135

Nexperia USA Inc. BC847AW,135

Part Number:
BC847AW,135
Manufacturer:
Nexperia USA Inc.
Ventron No:
3069031-BC847AW,135
Description:
TRANS NPN 45V 0.1A SOT323
ECAD Model:
Datasheet:
BC847AW,135

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Specifications
Nexperia USA Inc. BC847AW,135 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC847AW,135.
  • Factory Lead Time
    4 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-70, SOT-323
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    Automotive, AEC-Q101
  • Published
    2014
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Max Power Dissipation
    200mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Frequency
    100MHz
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    BC847
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    200mW
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    100MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    45V
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    110 @ 2mA 5V
  • Current - Collector Cutoff (Max)
    15nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    400mV @ 5mA, 100mA
  • Collector Emitter Breakdown Voltage
    45V
  • Transition Frequency
    100MHz
  • Collector Base Voltage (VCBO)
    50V
  • Emitter Base Voltage (VEBO)
    6V
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
BC847AW,135 Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.100MHz is present in the transition frequency.Maximum collector currents can be below 100mA volts.

BC847AW,135 Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz


BC847AW,135 Applications
There are a lot of Nexperia USA Inc.
BC847AW,135 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BC847AW,135 More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
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Transistor, Bipolar Rohs Compliant: Yes |Nexperia BC847AW,135
vp_BC847xW_SER - 45 V, 100 mA NPN general-purpose transistors
BC847AW Series 45 V 100 mA NPN Surface Mount Silicon Transistor - SOT-323
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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