Nexperia USA Inc. BC847AMB,315

Name: BC847AMB,315
Brand: Nexperia USA Inc.
SKU: 2465302-BC847AMB,315
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC847AMB,315

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2465302-BC847AMB,315

Description:: TRANS NPN 45V 0.1A 3DFN

ECAD Model:

Datasheet:: BC847AMB,315

Specifications

Nexperia USA Inc. BC847AMB,315 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC847AMB,315.

Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-XFDFN
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Published
2011
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Max Power Dissipation
250mW
Terminal Position
BOTTOM
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BC847
Pin Count
3
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
250mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
200mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
110 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
200mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
100MHz
Frequency - Transition
100MHz
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
6V
RoHS Status
ROHS3 Compliant

Description

BC847AMB,315 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 110 @ 2mA 5V.When VCE saturation is 200mV @ 500μA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.A maximum collector current of 100mA volts can be achieved.

BC847AMB,315 Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 200mV @ 500μA, 10mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

BC847AMB,315 Applications
There are a lot of Nexperia USA Inc.
BC847AMB,315 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC847AMB,315 More Descriptions

Bipolar (Bjt) Single Transistor, Npn, 45 V, 250 Mw, 100 Ma, 110 Rohs Compliant: Yes |Nexperia BC847AMB,315
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
BC847xMB series - 45 V, 100 mA NPN general-purpose transistors
Trans GP BJT NPN 45V 0.1A Automotive 3-Pin DFN T/R
Transistor NPN,45V 0.1A, SOT883B; Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:-; Power Dissipation
TRANSISTOR NPN,45V 0.1A, SOT883B; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: -; Power Dissipation Pd: 250mW; DC Collector Current: 100mA; DC Current Gain hFE: 110hFE; Transistor Case Style: SOT-883B; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C

Certification