BC847AM,315

Nexperia USA Inc. BC847AM,315

Part Number:
BC847AM,315
Manufacturer:
Nexperia USA Inc.
Ventron No:
2464907-BC847AM,315
Description:
TRANS NPN 45V 0.1A SOT883
ECAD Model:
Datasheet:
BC847AM,315

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Specifications
Nexperia USA Inc. BC847AM,315 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC847AM,315.
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-101, SOT-883
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    Automotive, AEC-Q101
  • Published
    2008
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Max Power Dissipation
    250mW
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    260
  • Frequency
    100MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    BC847
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    250mW
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    100MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    45V
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    110 @ 2mA 5V
  • Current - Collector Cutoff (Max)
    15nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    400mV @ 5mA, 100mA
  • Collector Emitter Breakdown Voltage
    45V
  • Transition Frequency
    100MHz
  • Max Breakdown Voltage
    45V
  • Collector Base Voltage (VCBO)
    50V
  • Emitter Base Voltage (VEBO)
    6V
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
BC847AM,315 Overview
DC current gain in this device equals 110 @ 2mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 5mA, 100mA.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.

BC847AM,315 Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz


BC847AM,315 Applications
There are a lot of Nexperia USA Inc.
BC847AM,315 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BC847AM,315 More Descriptions
General-Purpose Transistor BJT NPN 45V 100mA 3-Pin SC-101 Automotive
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
BC847 Series 45 V 100 mA 250 mW SMT NPN General Purpose Transistor - SOT-883
Trans GP BJT NPN 45V 0.1A Automotive 3-Pin DFN T/R
vp_BC847xM_SER - 45 V, 100 mA NPN general-purpose transistors
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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