Nexperia USA Inc. BC847AM,315
- Part Number:
- BC847AM,315
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2464907-BC847AM,315
- Description:
- TRANS NPN 45V 0.1A SOT883
- Datasheet:
- BC847AM,315
Nexperia USA Inc. BC847AM,315 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC847AM,315.
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-101, SOT-883
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2008
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Max Power Dissipation250mW
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBC847
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation250mW
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product100MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)45V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce110 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage45V
- Transition Frequency100MHz
- Max Breakdown Voltage45V
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)6V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BC847AM,315 Overview
DC current gain in this device equals 110 @ 2mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 5mA, 100mA.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC847AM,315 Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847AM,315 Applications
There are a lot of Nexperia USA Inc.
BC847AM,315 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 110 @ 2mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 5mA, 100mA.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC847AM,315 Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847AM,315 Applications
There are a lot of Nexperia USA Inc.
BC847AM,315 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC847AM,315 More Descriptions
General-Purpose Transistor BJT NPN 45V 100mA 3-Pin SC-101 Automotive
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
BC847 Series 45 V 100 mA 250 mW SMT NPN General Purpose Transistor - SOT-883
Trans GP BJT NPN 45V 0.1A Automotive 3-Pin DFN T/R
vp_BC847xM_SER - 45 V, 100 mA NPN general-purpose transistors
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
BC847 Series 45 V 100 mA 250 mW SMT NPN General Purpose Transistor - SOT-883
Trans GP BJT NPN 45V 0.1A Automotive 3-Pin DFN T/R
vp_BC847xM_SER - 45 V, 100 mA NPN general-purpose transistors
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
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