ON Semiconductor BC847ALT1G
- Part Number:
- BC847ALT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2462840-BC847ALT1G
- Description:
- TRANS NPN 45V 0.1A SOT23
- Datasheet:
- BC847ALT1G
ON Semiconductor BC847ALT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC847ALT1G.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time4 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC45V
- Max Power Dissipation300mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation300mW
- Halogen FreeHalogen Free
- Gain Bandwidth Product100MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)45V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce110 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage45V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage600mV
- Max Breakdown Voltage45V
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)6V
- hFE Min110
- Height1.11mm
- Length3.04mm
- Width2.64mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BC847ALT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 110 @ 2mA 5V.The collector emitter saturation voltage is 600mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.In the part, the transition frequency is 100MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BC847ALT1G Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC847ALT1G Applications
There are a lot of ON Semiconductor
BC847ALT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 110 @ 2mA 5V.The collector emitter saturation voltage is 600mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.In the part, the transition frequency is 100MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BC847ALT1G Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC847ALT1G Applications
There are a lot of ON Semiconductor
BC847ALT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC847ALT1G More Descriptions
ON Semi BC847ALT1G NPN Bipolar Transistor; 0.1 A; 45 V; 3-Pin SOT-23
45V 300mW 110@2mA,5V 100mA NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
BC847ALT1G Series NPN 45 V 100 mA SMT General Purpose Transistor - SOT-23
Trans GP BJT NPN 45V 0.1A 300mW 3-Pin SOT-23 T/R
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistor, NPN, 45V, 100MA, SOT-23-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power
Bipolar Transistor, Npn, 45V Sot-23, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:45V; Continuous Collector Current:100Ma; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi BC847ALT1G.
45V 300mW 110@2mA,5V 100mA NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
BC847ALT1G Series NPN 45 V 100 mA SMT General Purpose Transistor - SOT-23
Trans GP BJT NPN 45V 0.1A 300mW 3-Pin SOT-23 T/R
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistor, NPN, 45V, 100MA, SOT-23-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power
Bipolar Transistor, Npn, 45V Sot-23, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:45V; Continuous Collector Current:100Ma; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi BC847ALT1G.
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