ON Semiconductor BC846BWT1G

Name: BC846BWT1G
Brand: ON Semiconductor
SKU: 2464825-BC846BWT1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC846BWT1G

Manufacturer:: ON Semiconductor

Ventron No:: 2464825-BC846BWT1G

Description:: TRANS NPN 65V 0.1A SC-70

ECAD Model:

Datasheet:: BC846BWT1G

Specifications

ON Semiconductor BC846BWT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC846BWT1G.

Lifecycle Status
ACTIVE (Last Updated: 14 hours ago)
Factory Lead Time
5 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
65V
Max Power Dissipation
150mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
100mA
Frequency
100MHz
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
150mW
Transistor Application
AMPLIFIER
Halogen Free
Halogen Free
Gain Bandwidth Product
100MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
65V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
65V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
600mV
Max Breakdown Voltage
65V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
6V
hFE Min
150
Height
900μm
Length
2.2mm
Width
1.35mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BC846BWT1G Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 600mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).100MHz is present in the transition frequency.An input voltage of 65V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.

BC846BWT1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz

BC846BWT1G Applications
There are a lot of ON Semiconductor
BC846BWT1G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC846BWT1G More Descriptions

ON Semi BC846BWT1G NPN Bipolar Transistor; 0.1 A; 65 V; 3-Pin SC-70
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 65V 0.1A 150mW Automotive 3-Pin SC-70 T/R
BC Series 65 V 100 mA SMT NPN Silicon General Purpose Transistor - SOT-323
TRANSISTOR, NPN, 65V, 100MA, SOT-323-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 65V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 150mW; DC Collector Current: 100mA; DC Current Gain hFE: 200hFE;
NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 which is designed for low power surface mount applications.
Bipolar Transistor, Npn, 65V, Sc-70, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:65V; Continuous Collector Current:100Ma; Power Dissipation:150Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi BC846BWT1G.

Certification