Nexperia USA Inc. BC846BW,115

Name: BC846BW,115
Brand: Nexperia USA Inc.
SKU: 2464431-BC846BW,115
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC846BW,115

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2464431-BC846BW,115

Description:: TRANS NPN 65V 0.1A SOT323

ECAD Model:

Datasheet:: BC846BW,115

Specifications

Nexperia USA Inc. BC846BW,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC846BW,115.

Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Published
2012
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BC846
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
200mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
65V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 100mA
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
200mV
Frequency - Transition
100MHz
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
6V
hFE Min
110
Max Junction Temperature (Tj)
150°C
Ambient Temperature Range High
150°C
Height
1.1mm
RoHS Status
ROHS3 Compliant

Description

BC846BW,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 5V.With a collector emitter saturation voltage of 200mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 100mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.Collector current can be as low as 100mA volts at its maximum.

BC846BW,115 Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

BC846BW,115 Applications
There are a lot of Nexperia USA Inc.
BC846BW,115 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC846BW,115 More Descriptions

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Transistor GP BJT NPN 65V 100A 3-Pin SOT-323
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Transition Frequency Typ, ft:100MHz; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain Max (hfe):290 ;RoHS Compliant: Yes
TRANSISTOR, NPN, 65V, 0.1A, SOT323; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:200; Operating Temperature Min:-65°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-323; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)

Certification