NXP USA Inc. BC846BT,115
- Part Number:
- BC846BT,115
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2469345-BC846BT,115
- Description:
- TRANS NPN 65V 0.1A SOT416
- Datasheet:
- BC846 Series
NXP USA Inc. BC846BT,115 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BC846BT,115.
- Mounting TypeSurface Mount
- Package / CaseSC-75, SOT-416
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2009
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBC846
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power - Max150mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)65V
- Current - Collector (Ic) (Max)100mA
- Transition Frequency100MHz
- Frequency - Transition100MHz
- Power Dissipation-Max (Abs)0.15W
- RoHS StatusROHS3 Compliant
BC846BT,115 Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 100mA.100MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 65V.
BC846BT,115 Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
a transition frequency of 100MHz
BC846BT,115 Applications
There are a lot of NXP USA Inc.
BC846BT,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 100mA.100MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 65V.
BC846BT,115 Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
a transition frequency of 100MHz
BC846BT,115 Applications
There are a lot of NXP USA Inc.
BC846BT,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC846BT,115 More Descriptions
BC846 series - 65 V, 100 mA NPN general-purpose transistors
Trans GP BJT NPN 65V 0.1A Automotive 3-Pin SC-75 T/R
TRANSISTOR, BIPOL, NPN, 65V, SOT-416-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 65V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 150mW; DC Collector Current: 100mA; DC Current Gain hFE: 110hFE;
Trans GP BJT NPN 65V 0.1A Automotive 3-Pin SC-75 T/R
TRANSISTOR, BIPOL, NPN, 65V, SOT-416-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 65V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 150mW; DC Collector Current: 100mA; DC Current Gain hFE: 110hFE;
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