Fairchild/ON Semiconductor BC846BMTF

Name: BC846BMTF
Brand: Fairchild/ON Semiconductor
SKU: 2845151-BC846BMTF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC846BMTF

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2845151-BC846BMTF

Description:: TRANS NPN 65V 0.1A SOT23

ECAD Model:

Datasheet:: BC846-BC850

Specifications

Fairchild/ON Semiconductor BC846BMTF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC846BMTF.

Lifecycle Status
LAST SHIPMENTS (Last Updated: 5 days ago)
Factory Lead Time
13 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
65V
Max Power Dissipation
310mW
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
100mA
Frequency
300MHz
Base Part Number
BC846
Number of Elements
1
Element Configuration
Single
Power Dissipation
310mW
Transistor Application
SWITCHING
Gain Bandwidth Product
300MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
65V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
65V
Transition Frequency
300MHz
Collector Emitter Saturation Voltage
90mV
Max Breakdown Voltage
65V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
6V
hFE Min
110
Max Junction Temperature (Tj)
150°C
Height
1.2mm
Length
2.92mm
Width
1.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

BC846BMTF Overview
This device has a DC current gain of 200 @ 2mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 90mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 100mA.In this part, there is a transition frequency of 300MHz.As a result, it can handle voltages as low as 65V volts.The maximum collector current is 100mA volts.

BC846BMTF Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 90mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz

BC846BMTF Applications
There are a lot of ON Semiconductor
BC846BMTF applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC846BMTF More Descriptions

BC846 Series 65 V CE Breakdown 0.1 A NPN Epitaxial Silicon Transistor - SOT-23
Trans GP BJT NPN 65V 0.1A 310mW 3-Pin SOT-23 T/R
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon
TRANSISTOR, NPN, 65V, SOT-23; Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Transition Frequency ft:300MHz; Power Dissipation Pd:310mW; DC Collector Current:100mA; DC Current Gain hFE:110; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Collector Emitter Voltage Vces:250mV; Current Ic Continuous a Max:100mA; Gain Bandwidth ft Typ:300MHz; Hfe Min:200; Termination Type:SMD; Transistor Type:General Purpose

Certification