ON Semiconductor BC846BLT3G
- Part Number:
- BC846BLT3G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2462810-BC846BLT3G
- Description:
- TRANS NPN 65V 0.1A SOT-23
- Datasheet:
- BC846BLT3G
ON Semiconductor BC846BLT3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC846BLT3G.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time4 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC65V
- Max Power Dissipation300mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation300mW
- Halogen FreeHalogen Free
- Gain Bandwidth Product100MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)65V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage65V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage600mV
- Max Breakdown Voltage65V
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)6V
- hFE Min200
- Height1mm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BC846BLT3G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 600mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 65V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC846BLT3G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC846BLT3G Applications
There are a lot of ON Semiconductor
BC846BLT3G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 600mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 65V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC846BLT3G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC846BLT3G Applications
There are a lot of ON Semiconductor
BC846BLT3G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC846BLT3G More Descriptions
ON Semi BC846BLT3G NPN Bipolar Transistor; 0.1 A; 65 V; 3-Pin SOT-23
65V 225mW 100mA NPN SOT-23-3 Bipolar Transistors - BJT ROHS
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
BC Series 65 V 100 mA SMT NPN Silicon General Purpose Transistor - SOT-23
Trans GP BJT NPN 65V 0.1A Automotive 3-Pin SOT-23 T/R
Transistor, Bipol, Npn, 65V, Sot-23-3; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:65V; Transition Frequency Ft:100Mhz; Power Dissipation Pd:225Mw; Dc Collector Current:100Ma; Dc Current Gain Hfe:200Hfe; Transistor Rohs Compliant: Yes |Onsemi BC846BLT3G
65V 225mW 100mA NPN SOT-23-3 Bipolar Transistors - BJT ROHS
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
BC Series 65 V 100 mA SMT NPN Silicon General Purpose Transistor - SOT-23
Trans GP BJT NPN 65V 0.1A Automotive 3-Pin SOT-23 T/R
Transistor, Bipol, Npn, 65V, Sot-23-3; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:65V; Transition Frequency Ft:100Mhz; Power Dissipation Pd:225Mw; Dc Collector Current:100Ma; Dc Current Gain Hfe:200Hfe; Transistor Rohs Compliant: Yes |Onsemi BC846BLT3G
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
12 January 2024
SN74LVC1G08DBVR Characteristics, Specifications, Layout, Advantages and Applications
Ⅰ. SN74LVC1G08DBVR overviewⅡ. Characteristics of SN74LVC1G08DBVRⅢ. The specifications of SN74LVC1G08DBVRⅣ. Layout of SN74LVC1G08DBVRⅤ. What are the advantages of SN74LVC1G08DBVR?Ⅵ. Where is SN74LVC1G08DBVR used?Ⅶ. How to use SN74LVC1G08DBVR?SN74LVC1G08DBVR is... -
15 January 2024
Performance and Applications of TMS320VC5502PGF300 Digital Signal Processor
Ⅰ. What is a digital signal processor?Ⅱ. Introduction to TMS320VC5502PGF300Ⅲ. Specifications of TMS320VC5502PGF300Ⅳ. Performance of TMS320VC5502PGF300Ⅴ. CPU architecture of TMS320VC5502PGF300Ⅵ. Applications of TMS320VC5502PGF300Ⅶ. Package of TMS320VC5502PGF300Ⅷ. What are... -
15 January 2024
SN75176BDR Characteristics, Working Principle and Applications
Ⅰ. Overview of SN75176BDRⅡ. Specifications of SN75176BDRⅢ. What are the characteristics of SN75176BDR?Ⅳ. Symbol, footprint and pin configuration of SN75176BDRⅤ. Simplified schematic of SN75176BDRⅥ. How does SN75176BDR work?Ⅶ.... -
16 January 2024
AD9361BBCZ RF Transceiver Manufacturer, Characteristics, Applications and Package
Ⅰ. Overview of AD9361BBCZⅡ. Who produced AD9361BBCZ?Ⅲ. Technical parameters of AD9361BBCZⅣ. What are the characteristics of AD9361BBCZ?Ⅴ. Market trend of AD9361BBCZⅥ. Where is AD9361BBCZ used?Ⅶ. How to use...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.