Fairchild/ON Semiconductor BC81725MTF

Name: BC81725MTF
Brand: Fairchild/ON Semiconductor
SKU: 2463210-BC81725MTF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC81725MTF

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2463210-BC81725MTF

Description:: TRANS NPN 45V 0.8A SOT-23

ECAD Model:

Datasheet:: BC817,BC818

Specifications

Fairchild/ON Semiconductor BC81725MTF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC81725MTF.

Lifecycle Status
LAST SHIPMENTS (Last Updated: 5 days ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
59.987591mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
310mW
Terminal Position
DUAL
Terminal Form
GULL WING
Frequency
100MHz
Base Part Number
BC817
Number of Elements
1
Voltage
45V
Element Configuration
Single
Current
8A
Power Dissipation
310mW
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
800mA
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
700mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
hFE Min
100
Height
970μm
Length
2.9mm
Width
1.3mm
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

BC81725MTF Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 700mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.

BC81725MTF Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BC81725MTF Applications
There are a lot of ON Semiconductor
BC81725MTF applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC81725MTF More Descriptions

Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
BC817 Series 45 V CE Breakdown .8 A NPN Epitaxial Silicon Transistor - SOT-23
Trans GP BJT NPN 45V 0.8A 3-Pin SOT-23 T/R
TRANSISTOR,BJT,NPN,45V V(BR)CEO,500MA I(C),TO-236AA
TRANSISTOR, NPN, 45V, 0.8A, SOT-23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 310mW; DC Collector Current: 800mA; DC Current Gain hFE: 100hFE; T

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