ON Semiconductor BC817-40LT3G
- Part Number:
- BC817-40LT3G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2845085-BC817-40LT3G
- Description:
- TRANS NPN 45V 0.5A SOT-23
- Datasheet:
- BC817-40LT3G
ON Semiconductor BC817-40LT3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC817-40LT3G.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time10 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Max Power Dissipation300mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBC817
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation300mW
- Halogen FreeHalogen Free
- Gain Bandwidth Product100MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)45V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce250 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage45V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage700mV
- Max Breakdown Voltage45V
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)5V
- hFE Min250
- Height940μm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BC817-40LT3G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 250 @ 100mA 1V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
BC817-40LT3G Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC817-40LT3G Applications
There are a lot of ON Semiconductor
BC817-40LT3G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 250 @ 100mA 1V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
BC817-40LT3G Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC817-40LT3G Applications
There are a lot of ON Semiconductor
BC817-40LT3G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC817-40LT3G More Descriptions
BC817-40L Series 45 V 500 mA NPN General Purpose Transistor - SOT-23-3
45V 300mW 250@100mA,1V 500mA NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Transistor, BIPOL, NPN, 45V, SOT-23-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power
TRANSISTOR, BIPOL, NPN, 45V, SOT-23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 225mW; DC Collector Current: 500mA; DC Current Gain hFE: 40hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
45V 300mW 250@100mA,1V 500mA NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Transistor, BIPOL, NPN, 45V, SOT-23-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power
TRANSISTOR, BIPOL, NPN, 45V, SOT-23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 225mW; DC Collector Current: 500mA; DC Current Gain hFE: 40hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
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