BC817-40

STMicroelectronics BC817-40

Part Number:
BC817-40
Manufacturer:
STMicroelectronics
Ventron No:
2465912-BC817-40
Description:
TRANS NPN 45V 0.5A SOT-23
ECAD Model:
Datasheet:
BC817-25, BC817-40 Preliminary

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Specifications
STMicroelectronics BC817-40 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BC817-40.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    50V
  • Max Power Dissipation
    250mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    500mA
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    BC817
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    250mW
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    100MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    45V
  • Max Collector Current
    500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    250 @ 100mA 1V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    700mV @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    45V
  • Transition Frequency
    100MHz
  • Max Breakdown Voltage
    45V
  • Collector Base Voltage (VCBO)
    50V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    250
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead
Description
BC817-40 Overview
DC current gain in this device equals 250 @ 100mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 500mA volts.

BC817-40 Features
the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 100MHz


BC817-40 Applications
There are a lot of STMicroelectronics
BC817-40 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BC817-40 More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
BJT, SOT-23, 45V, 800mA, NPN, 150°C
Trans GP BJT NPN 45V 0.8A 310mW 3-Pin SOT-23 T/R
Transistor NPN 0,8A/45V 0,31W SOT-23 BC817-40
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 800 / Collector-Emitter Voltage (Vceo) V = 45 / DC Current Gain (hFE) = 400 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 310 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 700 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1.3 / Reflow Temperature Max. °C = 260
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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