Diodes Incorporated BC817-40-7
- Part Number:
- BC817-40-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2465767-BC817-40-7
- Description:
- TRANS NPN 45V 0.8A SMD SOT23-3
- Datasheet:
- BC817-40-7
Diodes Incorporated BC817-40-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BC817-40-7.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee0
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn85Pb15)
- SubcategoryOther Transistors
- Max Power Dissipation310mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)235
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)10
- Base Part NumberBC817
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power - Max310mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product100MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)700mV
- Max Collector Current800mA
- DC Current Gain (hFE) (Min) @ Ic, Vce250 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage45V
- Transition Frequency100MHz
- Max Breakdown Voltage45V
- Emitter Base Voltage (VEBO)5V
- hFE Min250
- Height1mm
- Length3.05mm
- Width1.4mm
- REACH SVHCNo SVHC
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
BC817-40-7 Overview
In this device, the DC current gain is 250 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.100MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 800mA volts.
BC817-40-7 Features
the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC817-40-7 Applications
There are a lot of Diodes Incorporated
BC817-40-7 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 250 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.100MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 800mA volts.
BC817-40-7 Features
the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC817-40-7 Applications
There are a lot of Diodes Incorporated
BC817-40-7 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC817-40-7 More Descriptions
TRANS NPN 45V 0.8A SMD SOT23-3
OEMs, CMs ONLY (NO BROKERS)
OEMs, CMs ONLY (NO BROKERS)
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