Diodes Incorporated BC817-40-7-F
- Part Number:
- BC817-40-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2845694-BC817-40-7-F
- Description:
- TRANS NPN 45V 0.8A SOT23-3
- Datasheet:
- BC817-40-7-F
Diodes Incorporated BC817-40-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BC817-40-7-F.
- Factory Lead Time19 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- Max Power Dissipation310mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBC817
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation350mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product100MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)45V
- Max Collector Current800mA
- DC Current Gain (hFE) (Min) @ Ic, Vce250 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage45V
- Current - Collector (Ic) (Max)500mA
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage700mV
- Max Breakdown Voltage45V
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)5V
- Height1mm
- Length3.05mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BC817-40-7-F Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 250 @ 100mA 1V.With a collector emitter saturation voltage of 700mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 800mA volts at its maximum.
BC817-40-7-F Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC817-40-7-F Applications
There are a lot of Diodes Incorporated
BC817-40-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 250 @ 100mA 1V.With a collector emitter saturation voltage of 700mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 800mA volts at its maximum.
BC817-40-7-F Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC817-40-7-F Applications
There are a lot of Diodes Incorporated
BC817-40-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC817-40-7-F More Descriptions
TRANS NPN 45V 0.8A SOT23-3 / Trans GP BJT NPN 45V 0.5A 350mW 3-Pin SOT-23 T/R
45V 310mW 250@100mA,1V 500mA NPN SOT-23-3 Bipolar Transistors - BJT ROHS
BC817-40 Series NPN 45 V 310 mW Small Signal Transisitor Surface Mount -SOT-23-3
DIODES INC. - BC817-40-7-F - Bipolar (BJT) Single Transistor, NPN, 45 V, 100 MHz, 310 mW, 500 mA, 250 hFE
Transistor NPN 0.8A 45V 250hfe SOT23 | Diodes Inc BC817-40-7-F
Transistor,NPN,45V,0.5A,SOT23-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation
TRANSISTOR,NPN,45V,0.5A,SOT23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 310mW; DC Collector Current: 500mA; DC Current Gain hFE: 250hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Gain Bandwidth ft Typ: 100MHz; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C
45V 310mW 250@100mA,1V 500mA NPN SOT-23-3 Bipolar Transistors - BJT ROHS
BC817-40 Series NPN 45 V 310 mW Small Signal Transisitor Surface Mount -SOT-23-3
DIODES INC. - BC817-40-7-F - Bipolar (BJT) Single Transistor, NPN, 45 V, 100 MHz, 310 mW, 500 mA, 250 hFE
Transistor NPN 0.8A 45V 250hfe SOT23 | Diodes Inc BC817-40-7-F
Transistor,NPN,45V,0.5A,SOT23-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation
TRANSISTOR,NPN,45V,0.5A,SOT23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 310mW; DC Collector Current: 500mA; DC Current Gain hFE: 250hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Gain Bandwidth ft Typ: 100MHz; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C
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