Nexperia USA Inc. BC817-40,215

Name: BC817-40,215
Brand: Nexperia USA Inc.
SKU: 3584989-BC817-40,215
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC817-40,215

Manufacturer:: Nexperia USA Inc.

Ventron No:: 3584989-BC817-40,215

Description:: TRANS NPN 45V 0.5A SOT23

ECAD Model:

Datasheet:: BC817-40,215

Specifications

Nexperia USA Inc. BC817-40,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC817-40,215.

Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
BC817
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
250mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
700mV
Frequency - Transition
100MHz
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
hFE Min
250
Max Junction Temperature (Tj)
150°C
Ambient Temperature Range High
150°C
VCEsat-Max
0.7 V
Height
1.1mm
RoHS Status
ROHS3 Compliant

Description

BC817-40,215 Overview
DC current gain in this device equals 250 @ 100mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 700mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.In extreme cases, the collector current can be as low as 500mA volts.

BC817-40,215 Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BC817-40,215 Applications
There are a lot of Nexperia USA Inc.
BC817-40,215 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC817-40,215 More Descriptions

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Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Transistor NPN, SOT-23 (TO-236AB) 45V 500mASurface Mount
Bipolar (Bjt) Single Transistor, General Purpose, Npn, 45 V, 100 Mhz, 250 Mw, 500 Ma, 250 Rohs Compliant: Yes |Nexperia BC817-40,215..
TRANSISTOR DIS.500mA 45V NPN SOT23 GEN. SMT
Transistor: bipolar, NPN, 50V,
Transistors - Bipolar (BJT) - Single TO-236-3, SC-59, SOT-23-3 1 (Unlimited) Tape & Reel (TR) Surface Mount NPN 250 @ 100mA 1V 700mV @ 50mA, 500mA 150°C TJ 100nA ICBO TRANS NPN 45V 0.5A SOT23
TRANSISTOR, NPN, 45V, 500MA, SOT-23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 250mW; DC Collector Current: 500mA; DC Current Gain hFE: 250hFE;
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 500 / Collector-Emitter Voltage (Vceo) V = 45 / DC Current Gain (hFE) = 400 / Collector-Base Voltage (Vcbo) V = 50 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 250 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 700 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1.2

Certification