Diodes Incorporated BC817-25W-7

Name: BC817-25W-7
Brand: Diodes Incorporated
SKU: 2464828-BC817-25W-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC817-25W-7

Manufacturer:: Diodes Incorporated

Ventron No:: 2464828-BC817-25W-7

Description:: TRANS NPN 45V 0.5A SC70-3

ECAD Model:

Datasheet:: BC817-25W-7

Specifications

Diodes Incorporated BC817-25W-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BC817-25W-7.

Factory Lead Time
19 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Weight
6.010099mg
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
100MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BC817
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
200mW
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
700mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
hFE Min
160
Height
1mm
Length
2.2mm
Width
1.35mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BC817-25W-7 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 160 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 700mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 100MHz.The breakdown input voltage is 45V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

BC817-25W-7 Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BC817-25W-7 Applications
There are a lot of Diodes Incorporated
BC817-25W-7 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC817-25W-7 More Descriptions

Bipolar (BJT) Transistor NPN 45V 500mA 100MHz 200mW Surface Mount SOT-323
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Bipolar Transistors - BJT NPN SURFACE MOUNT SMALL SIGNAL TRANS
Trans, Npn, 45V, 0.5A, 150Deg C, 0.2W Rohs Compliant: Yes |Diodes Inc. BC817-25W-7
Trans GP BJT NPN 45V 1A 3Pin SOT323 | Diodes Inc BC817-25W-7

Certification