ON Semiconductor BC817-25LT1G
- Part Number:
- BC817-25LT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2845074-BC817-25LT1G
- Description:
- TRANS NPN 45V 0.5A SOT23
- Datasheet:
- BC817-25LT1G
ON Semiconductor BC817-25LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC817-25LT1G.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time10 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingCut Tape (CT)
- Published2004
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Max Power Dissipation300mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating500mA
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBC817
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation300mW
- Halogen FreeHalogen Free
- Gain Bandwidth Product100MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)45V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage45V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage700mV
- Max Breakdown Voltage45V
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)5V
- hFE Min160
- Height940μm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BC817-25LT1G Overview
This device has a DC current gain of 160 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 700mV.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 500mA volts is possible.
BC817-25LT1G Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 100MHz
BC817-25LT1G Applications
There are a lot of ON Semiconductor
BC817-25LT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 160 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 700mV.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 500mA volts is possible.
BC817-25LT1G Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 100MHz
BC817-25LT1G Applications
There are a lot of ON Semiconductor
BC817-25LT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC817-25LT1G More Descriptions
Trans GP BJT NPN 45V 0.5A 300mW Automotive 3-Pin SOT-23 T/R
45V 300mW 160@100mA,1V 500mA NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
Transistor NPN 45V 0.5A hfe160 SOT23 | ON Semiconductor BC817-25LT1G
BC817-25L Series 45 V 500 mA 300 mW General Purpose Transistor - SOT-23-3
NPN Small Signal Transistor 3-Pin TO-236AB 500mA 45V
RF Transistor, NPN, 45V, 100MHZ, SOT-23;; SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V;
Transistor, Bipolar, Npn, 45V, 100Ma, To-236-3, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:45V; Continuous Collector Current:500Ma; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi BC817-25LT1G.
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 500 / Collector-Emitter Voltage (Vceo) V = 45 / DC Current Gain (hFE) = 40 / Collector-Base Voltage (Vcbo) V = 50 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 225 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 700 / Reflow Temperature Max. °C = 260
45V 300mW 160@100mA,1V 500mA NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
Transistor NPN 45V 0.5A hfe160 SOT23 | ON Semiconductor BC817-25LT1G
BC817-25L Series 45 V 500 mA 300 mW General Purpose Transistor - SOT-23-3
NPN Small Signal Transistor 3-Pin TO-236AB 500mA 45V
RF Transistor, NPN, 45V, 100MHZ, SOT-23;; SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V;
Transistor, Bipolar, Npn, 45V, 100Ma, To-236-3, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:45V; Continuous Collector Current:500Ma; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi BC817-25LT1G.
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 500 / Collector-Emitter Voltage (Vceo) V = 45 / DC Current Gain (hFE) = 40 / Collector-Base Voltage (Vcbo) V = 50 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 225 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 700 / Reflow Temperature Max. °C = 260
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