BC817-25LT1G

ON Semiconductor BC817-25LT1G

Part Number:
BC817-25LT1G
Manufacturer:
ON Semiconductor
Ventron No:
2845074-BC817-25LT1G
Description:
TRANS NPN 45V 0.5A SOT23
ECAD Model:
Datasheet:
BC817-25LT1G

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
ON Semiconductor BC817-25LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC817-25LT1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    10 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Cut Tape (CT)
  • Published
    2004
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    300mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    500mA
  • Frequency
    100MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    BC817
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    300mW
  • Halogen Free
    Halogen Free
  • Gain Bandwidth Product
    100MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    45V
  • Max Collector Current
    500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    160 @ 100mA 1V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    700mV @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    45V
  • Transition Frequency
    100MHz
  • Collector Emitter Saturation Voltage
    700mV
  • Max Breakdown Voltage
    45V
  • Collector Base Voltage (VCBO)
    50V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    160
  • Height
    940μm
  • Length
    2.9mm
  • Width
    1.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
BC817-25LT1G Overview
This device has a DC current gain of 160 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 700mV.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 500mA volts is possible.

BC817-25LT1G Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 100MHz


BC817-25LT1G Applications
There are a lot of ON Semiconductor
BC817-25LT1G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BC817-25LT1G More Descriptions
Trans GP BJT NPN 45V 0.5A 300mW Automotive 3-Pin SOT-23 T/R
45V 300mW 160@100mA,1V 500mA NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
Transistor NPN 45V 0.5A hfe160 SOT23 | ON Semiconductor BC817-25LT1G
BC817-25L Series 45 V 500 mA 300 mW General Purpose Transistor - SOT-23-3
NPN Small Signal Transistor 3-Pin TO-236AB 500mA 45V
RF Transistor, NPN, 45V, 100MHZ, SOT-23;; SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V;
Transistor, Bipolar, Npn, 45V, 100Ma, To-236-3, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:45V; Continuous Collector Current:500Ma; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi BC817-25LT1G.
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 500 / Collector-Emitter Voltage (Vceo) V = 45 / DC Current Gain (hFE) = 40 / Collector-Base Voltage (Vcbo) V = 50 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 225 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 700 / Reflow Temperature Max. °C = 260
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.