Fairchild/ON Semiconductor BC80740MTF

Name: BC80740MTF
Brand: Fairchild/ON Semiconductor
SKU: 3068846-BC80740MTF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC80740MTF

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3068846-BC80740MTF

Description:: TRANS PNP 45V 0.8A SOT23

ECAD Model:

Datasheet:: BC807, BC808

Specifications

Fairchild/ON Semiconductor BC80740MTF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC80740MTF.

Lifecycle Status
LAST SHIPMENTS (Last Updated: 5 days ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
310mW
Terminal Position
DUAL
Terminal Form
GULL WING
Frequency
100MHz
Base Part Number
BC807
Number of Elements
1
Element Configuration
Single
Power Dissipation
310mW
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
800mA
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-700mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
-50V
Emitter Base Voltage (VEBO)
-5V
hFE Min
100
Height
970μm
Length
2.92mm
Width
1.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

BC80740MTF Overview
In this device, the DC current gain is 250 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -700mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.100MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 800mA volts.

BC80740MTF Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz

BC80740MTF Applications
There are a lot of ON Semiconductor
BC80740MTF applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC80740MTF More Descriptions

BC807 Series 45 V CE Breakdown .8 A PNP Epitaxial Silicon Transistor - SOT-23
Trans GP BJT PNP 45V 0.8A 310mW 3-Pin SOT-23 T/R
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
Bipolar Transistors - BJT SOT-23 PNP GP AMP
Transistor, PNP, -45V, SOT-23; TRANSISTO; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:45V; Transition
Transistor; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:45V; Transition Frequency Typ, ft:100MHz; Power Dissipation, Pd:310mW; DC Collector Current:-800mA; DC Current Gain Max (hfe):100; No. of Pins:3 ;RoHS Compliant: Yes

Certification