Fairchild/ON Semiconductor BC80725MTF

Name: BC80725MTF
Brand: Fairchild/ON Semiconductor
SKU: 2845278-BC80725MTF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC80725MTF

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2845278-BC80725MTF

Description:: TRANS PNP 45V 0.8A SOT23

ECAD Model:

Datasheet:: BC80725MTF

Specifications

Fairchild/ON Semiconductor BC80725MTF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC80725MTF.

Lifecycle Status
LAST SHIPMENTS (Last Updated: 5 days ago)
Factory Lead Time
13 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
59.987591mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
310mW
Terminal Position
DUAL
Terminal Form
GULL WING
Frequency
100MHz
Base Part Number
BC807
Number of Elements
1
Voltage
45V
Element Configuration
Single
Current
8A
Power Dissipation
310mW
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
800mA
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-700mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
-50V
Emitter Base Voltage (VEBO)
5V
hFE Min
100
Height
960μm
Length
2.9mm
Width
1.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

BC80725MTF Overview
DC current gain in this device equals 160 @ 100mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -700mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 800mA volts.

BC80725MTF Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BC80725MTF Applications
There are a lot of ON Semiconductor
BC80725MTF applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC80725MTF More Descriptions

BC807 Series 45 V CE Breakdown .8 A PNP Epitaxial Silicon Transistor - SOT-23
Trans GP BJT PNP 45V 0.8A 310mW 3-Pin SOT-23 T/R
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
Bipolar Transistors - BJT SOT-23 PNP GP AMP
TRANSISTOR, PNP, -45V, SOT-23; Transisto; TRANSISTOR, PNP, -45V, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:310mW; DC Collector Current:-800mA; DC Current Gain hFE:100; No. of Pins:3

Certification