Fairchild/ON Semiconductor BC80716MTF

Name: BC80716MTF
Brand: Fairchild/ON Semiconductor
SKU: 3068901-BC80716MTF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC80716MTF

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3068901-BC80716MTF

Description:: TRANS PNP 45V 0.8A SOT-23

ECAD Model:

Datasheet:: BC807, BC808

Specifications

Fairchild/ON Semiconductor BC80716MTF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC80716MTF.

Lifecycle Status
LAST SHIPMENTS (Last Updated: 5 days ago)
Factory Lead Time
6 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
310mW
Terminal Position
DUAL
Terminal Form
GULL WING
Frequency
100MHz
Base Part Number
BC807
Number of Elements
1
Element Configuration
Single
Power Dissipation
310mW
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
800mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-700mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
-50V
Emitter Base Voltage (VEBO)
-5V
hFE Min
100
Height
970μm
Length
2.9mm
Width
1.3mm
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

BC80716MTF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 800mA volts.

BC80716MTF Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz

BC80716MTF Applications
There are a lot of ON Semiconductor
BC80716MTF applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC80716MTF More Descriptions

Trans GP BJT PNP 45V 0.8A 310mW 3-Pin SOT-23 T/R
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
PNP Epitaxial Silicon Transistor
BC80716MTF, SINGLE BIPOLAR TRANSISTORS;

Certification