ON Semiconductor BC807-40WT1G

Name: BC807-40WT1G
Brand: ON Semiconductor
SKU: 2846054-BC807-40WT1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC807-40WT1G

Manufacturer:: ON Semiconductor

Ventron No:: 2846054-BC807-40WT1G

Description:: TRANS PNP 45V 0.5A SC-70

ECAD Model:

Datasheet:: BC807-40WT1G

Specifications

ON Semiconductor BC807-40WT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC807-40WT1G.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
5 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2001
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
460mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Frequency
100MHz
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BC807
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
460mW
Halogen Free
Halogen Free
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
45V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-700mV
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
Height
900μm
Length
2.2mm
Width
1.35mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BC807-40WT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of -700mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.When collector current reaches its maximum, it can reach 500mA volts.

BC807-40WT1G Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BC807-40WT1G Applications
There are a lot of ON Semiconductor
BC807-40WT1G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC807-40WT1G More Descriptions

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TRANSISTOR, AEC-Q101, PNP, -45V, SC-70; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -45V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 460mW; DC Collector Current: -500mA; DC Current Gain hFE: 250hFE; Transistor Case Style: SC-70; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Certification