Diodes Incorporated BC807-40-7-F
- Part Number:
- BC807-40-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3068998-BC807-40-7-F
- Description:
- TRANS PNP 45V 0.5A SOT23-3
- Datasheet:
- BC807-40-7-F
Diodes Incorporated BC807-40-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BC807-40-7-F.
- Factory Lead Time15 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- Max Power Dissipation310mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBC807
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation310mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product100MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)-45V
- Max Collector Current-500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce250 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage-45V
- Current - Collector (Ic) (Max)500mA
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage-700mV
- Max Breakdown Voltage45V
- Collector Base Voltage (VCBO)-50V
- Emitter Base Voltage (VEBO)-5V
- hFE Min250
- Max Junction Temperature (Tj)150°C
- Height1.1mm
- Length3.05mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BC807-40-7-F Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of -700mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach -500mA volts.
BC807-40-7-F Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
BC807-40-7-F Applications
There are a lot of Diodes Incorporated
BC807-40-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of -700mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach -500mA volts.
BC807-40-7-F Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
BC807-40-7-F Applications
There are a lot of Diodes Incorporated
BC807-40-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC807-40-7-F More Descriptions
TRANS PNP 45V 0.5A SOT23-3 / Trans GP BJT PNP 45V 0.5A 350mW 3-Pin SOT-23 T/R
DIODES INC. - BC807-40-7-F - Bipolar (BJT) Single Transistor, PNP, -45 V, 100 MHz, 310 mW, -500 mA, 250 hFE
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
Transistor PNP 0.5A 45V 250hfe SOT23 | Diodes Inc BC807-40-7-F
BC807 Series 45 V 500 mA Surface Mount PNP Small Signal Transistor - SOT23-3
General Purpose Transistor Sot23 T&r 3K Rohs Compliant: Yes |Diodes Inc. BC807-40-7-F
Transistor,PNP,45V,0.5A,SOT23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency ft:100MHz; Power Dissipation
TRANSISTOR,PNP,45V,0.5A,SOT23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -45V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 310mW; DC Collector Current: -500mA; DC Current Gain hFE: 250hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Gain Bandwidth ft Typ: 100MHz; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C
DIODES INC. - BC807-40-7-F - Bipolar (BJT) Single Transistor, PNP, -45 V, 100 MHz, 310 mW, -500 mA, 250 hFE
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
Transistor PNP 0.5A 45V 250hfe SOT23 | Diodes Inc BC807-40-7-F
BC807 Series 45 V 500 mA Surface Mount PNP Small Signal Transistor - SOT23-3
General Purpose Transistor Sot23 T&r 3K Rohs Compliant: Yes |Diodes Inc. BC807-40-7-F
Transistor,PNP,45V,0.5A,SOT23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency ft:100MHz; Power Dissipation
TRANSISTOR,PNP,45V,0.5A,SOT23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -45V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 310mW; DC Collector Current: -500mA; DC Current Gain hFE: 250hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Gain Bandwidth ft Typ: 100MHz; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
19 December 2023
DS1990A: An Authentication and Data Storage Solution that Balances Efficiency and Security
Ⅰ. What is iButton?Ⅱ. Overview of DS1990A iButtonⅢ. Functional block diagram of DS1990AⅣ. Where is DS1990A iButton used?Ⅴ. How does DS1990A communicate with the host device?Ⅵ. Specifications of... -
19 December 2023
PT2399: The Next-Gen Digital Delay and Echo Audio Processor IC
Ⅰ. What is PT2399?Ⅱ. Structure and working principle of PT2399Ⅲ. Total harmonic distortion and noise of PT2399Ⅳ. Which one is better, PT2399 or PT2399?Ⅴ. Who is the manufacturer... -
20 December 2023
What is the STM32F103C8T6 Microcontroller and How Does It Work?
Ⅰ. STM32F103C8T6 overviewⅡ. What are the features of STM32F103C8T6?Ⅲ. Programming of STM32F103C8T6Ⅳ. STM32F103C8T6 priceⅤ. What is the difference between STM32F103C8T6 and CH32F103C8T6?Ⅵ. Decoupling circuit of STM32F103C8T6Ⅶ. Several working... -
20 December 2023
1N4007 Diode Characteristics and Application Guide
Ⅰ. Introduction of 1N4007Ⅱ. Naming rules of 1N4007 diodeⅢ. Technical parameters of 1N4007 diodeⅣ. Can we use 1N4004 instead of 1N4007?Ⅴ. 1N4007 diode principle of operationⅥ. Electrical characteristic...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.