Nexperia USA Inc. BC807-40,215
- Part Number:
- BC807-40,215
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2463088-BC807-40,215
- Description:
- TRANS PNP 45V 0.5A SOT23
- Datasheet:
- BC807-40,215
Nexperia USA Inc. BC807-40,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC807-40,215.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2009
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.21.00.95
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBC807
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power - Max250mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce250 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)45V
- Current - Collector (Ic) (Max)500mA
- Transition Frequency100MHz
- Frequency - Transition80MHz
- VCEsat-Max0.7 V
- RoHS StatusROHS3 Compliant
BC807-40,215 Overview
In this device, the DC current gain is 250 @ 100mA 1V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 50mA, 500mA.As a result, the part has a transition frequency of 100MHz.Collector Emitter Breakdown occurs at 45VV - Maximum voltage.
BC807-40,215 Features
the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
a transition frequency of 100MHz
BC807-40,215 Applications
There are a lot of Nexperia USA Inc. BC807-40,215 applications of single BJT transistors.
Muting
Inverter
Interface
Driver
In this device, the DC current gain is 250 @ 100mA 1V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 50mA, 500mA.As a result, the part has a transition frequency of 100MHz.Collector Emitter Breakdown occurs at 45VV - Maximum voltage.
BC807-40,215 Features
the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
a transition frequency of 100MHz
BC807-40,215 Applications
There are a lot of Nexperia USA Inc. BC807-40,215 applications of single BJT transistors.
Muting
Inverter
Interface
Driver
BC807-40,215 More Descriptions
Bipolar junction transistor, PNP, -500 mA, -45 ## Fehler ##, SMD, SOT-23, BC807-40,215
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
BC807 Series 500 mA SMT PNP General Purpose Transistor - SOT-23
Trans GP BJT PNP 45V 0.5A 345mW Automotive 3-Pin SOT-23 T/R
Transistor PNP, SOT-23 (TO-236AB) 45V 500mASurface Mount
vp_BC807_SER - 45 V, 500 mA PNP general-purpose transistors
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency Typ, ft:80MHz; Power Dissipation Pd:250mW; DC Collector Current:-500mA; DC Current Gain Max (hfe):250 ;RoHS Compliant: Yes
TRANSISTOR, PNP, 45V, 0.5A, SOT23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Power Dissipation Pd:250mW; DC Collector Current:-500mA; DC Current Gain hFE:250; Operating Temperature Min:-65°C; Operating Temperature Max:150°C; Transistor Case Style:TO-236AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) mA = 500 / Collector-Emitter Voltage (Vceo) V = 45 / DC Current Gain (hFE) = 600 / Collector-Base Voltage (Vcbo) V = 50 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 80 / Power Dissipation (Pd) mW = 250 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 700 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1.2
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
BC807 Series 500 mA SMT PNP General Purpose Transistor - SOT-23
Trans GP BJT PNP 45V 0.5A 345mW Automotive 3-Pin SOT-23 T/R
Transistor PNP, SOT-23 (TO-236AB) 45V 500mASurface Mount
vp_BC807_SER - 45 V, 500 mA PNP general-purpose transistors
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency Typ, ft:80MHz; Power Dissipation Pd:250mW; DC Collector Current:-500mA; DC Current Gain Max (hfe):250 ;RoHS Compliant: Yes
TRANSISTOR, PNP, 45V, 0.5A, SOT23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Power Dissipation Pd:250mW; DC Collector Current:-500mA; DC Current Gain hFE:250; Operating Temperature Min:-65°C; Operating Temperature Max:150°C; Transistor Case Style:TO-236AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) mA = 500 / Collector-Emitter Voltage (Vceo) V = 45 / DC Current Gain (hFE) = 600 / Collector-Base Voltage (Vcbo) V = 50 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 80 / Power Dissipation (Pd) mW = 250 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 700 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1.2
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