Nexperia USA Inc. BC807-25QAZ
- Part Number:
- BC807-25QAZ
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2463812-BC807-25QAZ
- Description:
- TRANS PNP 45V 0.5A DFN1010D-3
- Datasheet:
- BC807-25QAZ
Nexperia USA Inc. BC807-25QAZ technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC807-25QAZ.
- Factory Lead Time4 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case3-XDFN Exposed Pad
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2008
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Power Dissipation900mW
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberBC807
- Pin Count3
- Power - Max900mW
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)700mV
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 500mA 1V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage45V
- Max Breakdown Voltage45V
- Frequency - Transition80MHz
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)5V
- RoHS StatusROHS3 Compliant
BC807-25QAZ Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 500mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
BC807-25QAZ Features
the DC current gain for this device is 40 @ 500mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
BC807-25QAZ Applications
There are a lot of Nexperia USA Inc.
BC807-25QAZ applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 500mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
BC807-25QAZ Features
the DC current gain for this device is 40 @ 500mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
BC807-25QAZ Applications
There are a lot of Nexperia USA Inc.
BC807-25QAZ applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC807-25QAZ More Descriptions
Bipolar (BJT) Transistor PNP 45V 500mA 80MHz 900mW Surface Mount DFN1010D-3
BC807-25QA - 45 V, 500 mA PNP general-purpose transistor
Transistor, Bipolar Rohs Compliant: Yes |Nexperia BC807-25QAZ
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Trans GP BJT PNP 45V 0.5A 3-Pin DFN
BC807-25QA - 45 V, 500 mA PNP general-purpose transistor
Transistor, Bipolar Rohs Compliant: Yes |Nexperia BC807-25QAZ
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Trans GP BJT PNP 45V 0.5A 3-Pin DFN
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