BC807-25QAZ

Nexperia USA Inc. BC807-25QAZ

Part Number:
BC807-25QAZ
Manufacturer:
Nexperia USA Inc.
Ventron No:
2463812-BC807-25QAZ
Description:
TRANS PNP 45V 0.5A DFN1010D-3
ECAD Model:
Datasheet:
BC807-25QAZ

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Specifications
Nexperia USA Inc. BC807-25QAZ technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC807-25QAZ.
  • Factory Lead Time
    4 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    3-XDFN Exposed Pad
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    Automotive, AEC-Q101
  • Published
    2008
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Power Dissipation
    900mW
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    BC807
  • Pin Count
    3
  • Power - Max
    900mW
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    700mV
  • Max Collector Current
    500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 500mA 1V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    700mV @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    45V
  • Max Breakdown Voltage
    45V
  • Frequency - Transition
    80MHz
  • Collector Base Voltage (VCBO)
    50V
  • Emitter Base Voltage (VEBO)
    5V
  • RoHS Status
    ROHS3 Compliant
Description
BC807-25QAZ Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 500mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 500mA volts at its maximum.

BC807-25QAZ Features
the DC current gain for this device is 40 @ 500mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V


BC807-25QAZ Applications
There are a lot of Nexperia USA Inc.
BC807-25QAZ applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BC807-25QAZ More Descriptions
Bipolar (BJT) Transistor PNP 45V 500mA 80MHz 900mW Surface Mount DFN1010D-3
BC807-25QA - 45 V, 500 mA PNP general-purpose transistor
Transistor, Bipolar Rohs Compliant: Yes |Nexperia BC807-25QAZ
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Trans GP BJT PNP 45V 0.5A 3-Pin DFN
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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