Diodes Incorporated BC807-25-7-F
- Part Number:
- BC807-25-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2845818-BC807-25-7-F
- Description:
- TRANS PNP 45V 0.5A SMD SOT23-3
- Datasheet:
- BC807-25-7-F
Diodes Incorporated BC807-25-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BC807-25-7-F.
- Factory Lead Time19 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- Max Power Dissipation310mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBC807
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation310mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product100MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)45V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage45V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage-700mV
- Max Breakdown Voltage45V
- Emitter Base Voltage (VEBO)5V
- Height1mm
- Length3.05mm
- Width1.4mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BC807-25-7-F Overview
DC current gain in this device equals 160 @ 100mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -700mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 500mA volts.
BC807-25-7-F Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC807-25-7-F Applications
There are a lot of Diodes Incorporated
BC807-25-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 160 @ 100mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -700mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 500mA volts.
BC807-25-7-F Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC807-25-7-F Applications
There are a lot of Diodes Incorporated
BC807-25-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC807-25-7-F More Descriptions
In a Pack of 100, Diodes Inc BC807-25-7-F PNP Transistor, 500 mA, 45 V, 3-Pin SOT-23
Trans GP BJT PNP 45V 0.5A 350mW Automotive 3-Pin SOT-23 T/R
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
Transistor PNP 0.5A 45V 160hfe SOT23 | Diodes Inc BC807-25-7-F
General Purpose Transistor Sot23 T&r 3K Rohs Compliant: Yes |Diodes Inc. BC807-25-7-F
Trans GP BJT PNP 45V 0.5A 350mW Automotive 3-Pin SOT-23 T/R
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
Transistor PNP 0.5A 45V 160hfe SOT23 | Diodes Inc BC807-25-7-F
General Purpose Transistor Sot23 T&r 3K Rohs Compliant: Yes |Diodes Inc. BC807-25-7-F
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