ON Semiconductor BC807-16LT3G

Name: BC807-16LT3G
Brand: ON Semiconductor
SKU: 2463776-BC807-16LT3G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC807-16LT3G

Manufacturer:: ON Semiconductor

Ventron No:: 2463776-BC807-16LT3G

Description:: TRANS PNP 45V 0.5A SOT-23

ECAD Model:

Datasheet:: BC807-16LT3G

Specifications

ON Semiconductor BC807-16LT3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC807-16LT3G.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
10 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2001
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
225mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
100MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BC807
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
300mW
Transistor Application
SWITCHING
Halogen Free
Halogen Free
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-700mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
hFE Min
100
Height
1.11mm
Length
3.04mm
Width
2.64mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BC807-16LT3G Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -700mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.100MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.

BC807-16LT3G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BC807-16LT3G Applications
There are a lot of ON Semiconductor
BC807-16LT3G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC807-16LT3G More Descriptions

BC807 Series PNP 300 mW 45 V 500 mA SMT General Purpose Transistor - SOT-23
45V 300mW 100@100mA,1V 500mA PNP SOT-23(TO-236) Bipolar Transistors - BJT ROHS
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
ON Semi BC807-16LT3G PNP Bipolar Transistor, 0.5 A, 45 V, 3-Pin SOT-23 | ON Semiconductor BC807-16LT3G
Trans GP BJT PNP 45V 0.5A 3-Pin SOT-23 T/R - Tape and Reel
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Bipolar Transistor, Pnp, -45V, Full Reel; Transistor Polarity:Pnp; Collector Emitter Voltage Max:45V; Continuous Collector Current:500Ma; Power Dissipation:225Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi BC807-16LT3G

Certification