ON Semiconductor BC638
- Part Number:
- BC638
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2472342-BC638
- Description:
- TRANS PNP 60V 0.5A TO-92
- Datasheet:
- BC638, 640, 640-16
ON Semiconductor BC638 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC638.
- Voltage - Collector Emitter Breakdown (Max):60V
- Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
- Transistor Type:PNP
- Supplier Device Package:TO-92-3
- Series:-
- Power - Max:625mW
- Packaging:Bulk
- Package / Case:TO-226-3, TO-92-3 (TO-226AA)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Frequency - Transition:150MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
- Current - Collector Cutoff (Max):100nA (ICBO)
- Current - Collector (Ic) (Max):500mA
Images are for reference only.See Product Specifications for product details.If you are interested to buy AMI Semiconductor / ON Semiconductor BC638.
BC638 More Descriptions
Bulk Through Hole PNP Single Bipolar (BJT) Transistor 40 @ 150mA 2V 500mA 625mW 100MHz
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Transistor PNP BC638 ON SEMI Ampere=1 V=60 TO92
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Transistor PNP BC638 ON SEMI Ampere=1 V=60 TO92
The three parts on the right have similar specifications to BC638.
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ImagePart NumberManufacturerVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Mounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Base Part NumberPower - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionMountNumber of PinsTransistor Element MaterialPublishedJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsElement ConfigurationGain Bandwidth ProductPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentRoHS StatusLead FreeWeightFrequencyPower DissipationTransistor ApplicationView Compare
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BC63860V500mV @ 50mA, 500mAPNPTO-92-3-625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole150MHz40 @ 150mA, 2V100nA (ICBO)500mA-------------------------------------------------------
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--------------Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)150°C TJTape & Reel (TR)Obsolete1 (Unlimited)BC6351WNPN40 @ 150mA 2V100nA ICBO500mV @ 50mA, 500mA45V1A100MHz---------------------------------------
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--------------Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)BC635-NPN40 @ 150mA 2V100nA ICBO500mV @ 50mA, 500mA---Through Hole3SILICON2005e03EAR99Tin/Lead (Sn/Pb)EUROPEAN PART NUMBER8541.21.00.75Other Transistors45V625mWBOTTOM240not_compliant1A303Not Qualified1Single200MHzNPN45V1A45V200MHz500mV45V5V251ANon-RoHS CompliantContains Lead----
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--------------Through HoleTO-226-3, TO-92-3 (TO-226AA)-55°C~150°C TJBulkObsolete1 (Unlimited)BC639-NPN100 @ 150mA 2V100nA ICBO500mV @ 50mA, 500mA---Through Hole3SILICON--3EAR99---Other Transistors80V1WBOTTOMNOT SPECIFIED-1ANOT SPECIFIED--1Single100MHzNPN80V1A80V100MHz500mV-5V100-RoHS CompliantLead Free201mg100MHz1WSWITCHING
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