BC638

ON Semiconductor BC638

Part Number:
BC638
Manufacturer:
ON Semiconductor
Ventron No:
2472342-BC638
Description:
TRANS PNP 60V 0.5A TO-92
ECAD Model:
Datasheet:
BC638, 640, 640-16

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Specifications
ON Semiconductor BC638 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC638.
  • Voltage - Collector Emitter Breakdown (Max):
    60V
  • Vce Saturation (Max) @ Ib, Ic:
    500mV @ 50mA, 500mA
  • Transistor Type:
    PNP
  • Supplier Device Package:
    TO-92-3
  • Series:
    -
  • Power - Max:
    625mW
  • Packaging:
    Bulk
  • Package / Case:
    TO-226-3, TO-92-3 (TO-226AA)
  • Operating Temperature:
    -55°C ~ 150°C (TJ)
  • Mounting Type:
    Through Hole
  • Frequency - Transition:
    150MHz
  • DC Current Gain (hFE) (Min) @ Ic, Vce:
    40 @ 150mA, 2V
  • Current - Collector Cutoff (Max):
    100nA (ICBO)
  • Current - Collector (Ic) (Max):
    500mA
Description
Images are for reference only.See Product Specifications for product details.If you are interested to buy AMI Semiconductor / ON Semiconductor BC638.
BC638 More Descriptions
Bulk Through Hole PNP Single Bipolar (BJT) Transistor 40 @ 150mA 2V 500mA 625mW 100MHz
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Transistor PNP BC638 ON SEMI Ampere=1 V=60 TO92
Product Comparison
The three parts on the right have similar specifications to BC638.
  • Image
    Part Number
    Manufacturer
    Voltage - Collector Emitter Breakdown (Max):
    Vce Saturation (Max) @ Ib, Ic:
    Transistor Type:
    Supplier Device Package:
    Series:
    Power - Max:
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Frequency - Transition:
    DC Current Gain (hFE) (Min) @ Ic, Vce:
    Current - Collector Cutoff (Max):
    Current - Collector (Ic) (Max):
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Base Part Number
    Power - Max
    Transistor Type
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Frequency - Transition
    Mount
    Number of Pins
    Transistor Element Material
    Published
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    HTS Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Element Configuration
    Gain Bandwidth Product
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Continuous Collector Current
    RoHS Status
    Lead Free
    Weight
    Frequency
    Power Dissipation
    Transistor Application
    View Compare
  • BC638
    BC638
    60V
    500mV @ 50mA, 500mA
    PNP
    TO-92-3
    -
    625mW
    Bulk
    TO-226-3, TO-92-3 (TO-226AA)
    -55°C ~ 150°C (TJ)
    Through Hole
    150MHz
    40 @ 150mA, 2V
    100nA (ICBO)
    500mA
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BC635_D27Z
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    150°C TJ
    Tape & Reel (TR)
    Obsolete
    1 (Unlimited)
    BC635
    1W
    NPN
    40 @ 150mA 2V
    100nA ICBO
    500mV @ 50mA, 500mA
    45V
    1A
    100MHz
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BC635RL1
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    -55°C~150°C TJ
    Tape & Reel (TR)
    Obsolete
    1 (Unlimited)
    BC635
    -
    NPN
    40 @ 150mA 2V
    100nA ICBO
    500mV @ 50mA, 500mA
    -
    -
    -
    Through Hole
    3
    SILICON
    2005
    e0
    3
    EAR99
    Tin/Lead (Sn/Pb)
    EUROPEAN PART NUMBER
    8541.21.00.75
    Other Transistors
    45V
    625mW
    BOTTOM
    240
    not_compliant
    1A
    30
    3
    Not Qualified
    1
    Single
    200MHz
    NPN
    45V
    1A
    45V
    200MHz
    500mV
    45V
    5V
    25
    1A
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
  • BC63916
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    -55°C~150°C TJ
    Bulk
    Obsolete
    1 (Unlimited)
    BC639
    -
    NPN
    100 @ 150mA 2V
    100nA ICBO
    500mV @ 50mA, 500mA
    -
    -
    -
    Through Hole
    3
    SILICON
    -
    -
    3
    EAR99
    -
    -
    -
    Other Transistors
    80V
    1W
    BOTTOM
    NOT SPECIFIED
    -
    1A
    NOT SPECIFIED
    -
    -
    1
    Single
    100MHz
    NPN
    80V
    1A
    80V
    100MHz
    500mV
    -
    5V
    100
    -
    RoHS Compliant
    Lead Free
    201mg
    100MHz
    1W
    SWITCHING
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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