Fairchild/ON Semiconductor BC636

Name: BC636
Brand: Fairchild/ON Semiconductor
SKU: 2467516-BC636
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC636

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2467516-BC636

Description:: TRANS PNP 45V 1A TO-92

ECAD Model:

Datasheet:: BC636

Specifications

Fairchild/ON Semiconductor BC636 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC636.

Lifecycle Status
OBSOLETE (Last Updated: 4 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Supplier Device Package
TO-92-3
Weight
201mg
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
Through Hole
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Voltage - Rated DC
-45V
Max Power Dissipation
1W
Current Rating
-1A
Frequency
100MHz
Base Part Number
BC636
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
1W
Power - Max
1W
Gain Bandwidth Product
100MHz
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
45V
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
1A
Collector Emitter Saturation Voltage
-500mV
Frequency - Transition
100MHz
Collector Base Voltage (VCBO)
-45V
Emitter Base Voltage (VEBO)
-5V
hFE Min
40
Height
6.35mm
Length
6.35mm
Width
6.35mm
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

BC636 Overview
DC current gain in this device equals 40 @ 150mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -1A current rating.Product comes in TO-92-3 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 1A volts.

BC636 Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
the supplier device package of TO-92-3

BC636 Applications
There are a lot of ON Semiconductor
BC636 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC636 More Descriptions

Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Trans GP BJT PNP 45V 1A 3-Pin TO-92 Bulk - Boxed Product (Development Kits)
Bipolar Transistors - BJT TO-92 PNP GP AMP
Transistor; Transistor Type:Bipolar; Package/Case:TO-92; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:-1A; Voltage Rating:-45V ;RoHS Compliant: Yes
TRANSISTOR, PNP, TO-92; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -45V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 1W; DC Collector Current: -1A; DC Current Gain hFE: 40hFE; Transistor Case Styl
TRANSISTOR, PNP, TO-92; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:1W; DC Collector Current:-1A; DC Current Gain hFE:40; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:-500mV; Continuous Collector Current Ic Max:1.5A; Current Ic Continuous a Max:1.5A; Current Ic hFE:150mA; Device Marking:BC636; Gain Bandwidth ft Typ:50MHz; Hfe Min:40; No. of Transistors:1; Package / Case:TO-92; Pin Configuration:f; Power Dissipation Pd:1W; Power Dissipation Ptot Max:1W; Termination Type:Through Hole; Voltage Vcbo:45V

Product Comparison

The three parts on the right have similar specifications to BC636.

Image

Part Number

Manufacturer

Lifecycle Status

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Termination

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Max Power Dissipation

Current Rating

Frequency

Base Part Number

Number of Elements

Polarity

Element Configuration

Power Dissipation

Power - Max

Gain Bandwidth Product

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Collector Emitter Saturation Voltage

Frequency - Transition

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

RoHS Status

Lead Free

Transistor Element Material

Published

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Subcategory

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Polarity/Channel Type

Transition Frequency

Continuous Collector Current

Transistor Application

View Compare
BC636

Fairchild/ON Semiconductor

OBSOLETE (Last Updated: 4 days ago)

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

3

TO-92-3

201mg

150°C TJ

Bulk

Obsolete

1 (Unlimited)

Through Hole

150°C

-65°C

-45V

1W

-1A

100MHz

BC636

1

PNP

Single

1W

1W

100MHz

PNP

500mV

1A

40 @ 150mA 2V

100nA ICBO

500mV @ 50mA, 500mA

45V

45V

1A

-500mV

100MHz

-45V

-5V

40

6.35mm

6.35mm

6.35mm

No SVHC

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BC635_D27Z

Fairchild/ON Semiconductor

-

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

-

-

-

150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

BC635

-

-

-

-

1W

-

NPN

-

-

40 @ 150mA 2V

100nA ICBO

500mV @ 50mA, 500mA

-

45V

1A

-

100MHz

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BC636 vs BC635_D27Z
BC635RL1

ON Semiconductor

-

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

3

-

-

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

-

-

-

45V

625mW

1A

-

BC635

1

-

Single

-

-

200MHz

NPN

45V

1A

40 @ 150mA 2V

100nA ICBO

500mV @ 50mA, 500mA

45V

-

-

500mV

-

45V

5V

25

-

-

-

-

Non-RoHS Compliant

Contains Lead

SILICON

2005

e0

3

EAR99

Tin/Lead (Sn/Pb)

EUROPEAN PART NUMBER

8541.21.00.75

Other Transistors

BOTTOM

240

not_compliant

30

3

Not Qualified

NPN

200MHz

1A

-

BC636 vs BC635RL1
BC63916

Fairchild/ON Semiconductor

-

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

3

-

201mg

-55°C~150°C TJ

Bulk

Obsolete

1 (Unlimited)

-

-

-

80V

1W

1A

100MHz

BC639

1

-

Single

1W

-

100MHz

NPN

80V

1A

100 @ 150mA 2V

100nA ICBO

500mV @ 50mA, 500mA

80V

-

-

500mV

-

-

5V

100

-

-

-

-

RoHS Compliant

Lead Free

SILICON

-

-

3

EAR99

-

-

-

Other Transistors

BOTTOM

NOT SPECIFIED

-

NOT SPECIFIED

-

-

NPN

100MHz

-

SWITCHING

BC636 vs BC63916