Nexperia USA Inc. BC56PA,115

Name: BC56PA,115
Brand: Nexperia USA Inc.
SKU: 2465307-BC56PA,115
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC56PA,115

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2465307-BC56PA,115

Description:: TRANSISTOR NPN 80V 1A SOT1061

ECAD Model:

Datasheet:: BC56PA,115

Specifications

Nexperia USA Inc. BC56PA,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC56PA,115.

Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-PowerUDFN
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Max Power Dissipation
1.65W
Terminal Position
DUAL
Frequency
180MHz
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.65W
Case Connection
COLLECTOR
Power - Max
420mW
Transistor Application
SWITCHING
Gain Bandwidth Product
180MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
63 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
80V
Transition Frequency
180MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
100
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

BC56PA,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 63 @ 150mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 180MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 1A volts.

BC56PA,115 Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz

BC56PA,115 Applications
There are a lot of Nexperia USA Inc.
BC56PA,115 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC56PA,115 More Descriptions

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
vp_BC56PA_SER - 80 V, 1 A NPN medium power transistors
Trans GP BJT NPN 80V 1A 1650mW Automotive 3-Pin HUSON T/R
TRANS, NPN, 80V, 1A, SOT1061; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: -80V; Transition Frequency ft: 180MHz; Power Dissipation Pd: 1.65W; DC Collector Current: -1A; DC Current Gain hFE: 40hFE; Transistor
Transistor, Npn, 80V, 1A, Sot1061; Transistor Polarity:Npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:1A; Power Dissipation:1.65W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Qualification:- Rohs Compliant: Yes |Nexperia BC56PA,115

Product Comparison

The three parts on the right have similar specifications to BC56PA,115.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Max Power Dissipation

Terminal Position

Frequency

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Power - Max

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Radiation Hardening

RoHS Status

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Subcategory

Voltage - Rated DC

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Current - Collector (Ic) (Max)

Lead Free

Terminal Form

Configuration

Frequency - Transition

Supplier Device Package

Voltage - Collector Emitter Breakdown (Max)

View Compare
BC56PA,115

Nexperia USA Inc.

8 Weeks

Tin

Surface Mount

Surface Mount

3-PowerUDFN

3

SILICON

150°C TJ

Tape & Reel (TR)

2011

e3

Active

1 (Unlimited)

3

1.65W

DUAL

180MHz

3

1

Single

1.65W

COLLECTOR

420mW

SWITCHING

180MHz

NPN

NPN

80V

1A

63 @ 150mA 2V

100nA ICBO

500mV @ 50mA, 500mA

80V

180MHz

500mV

80V

100V

5V

100

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BC560CZL1

ON Semiconductor

-

-

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

3

SILICON

-55°C~150°C TJ

Tape & Box (TB)

2001

e0

Obsolete

1 (Unlimited)

3

625mW

BOTTOM

-

3

1

Single

-

-

-

AMPLIFIER

250MHz

PNP

PNP

250mV

100mA

380 @ 2mA 5V

15nA ICBO

250mV @ 5mA, 100mA

45V

250MHz

-250mV

-

-50V

5V

100

No

Non-RoHS Compliant

EAR99

Tin/Lead (Sn/Pb)

EUROPEAN PART NUMBER

8541.21.00.75

Other Transistors

-45V

240

-100mA

30

BC560

100mA

Contains Lead

-

-

-

-

-

BC56PA,115 vs BC560CZL1
BC56PASX

Nexperia USA Inc.

26 Weeks

Tin

Surface Mount

Surface Mount

3-UDFN Exposed Pad

3

SILICON

150°C TJ

Cut Tape (CT)

2014

-

Discontinued

1 (Unlimited)

3

420mW

DUAL

-

3

1

-

-

COLLECTOR

420mW

SWITCHING

-

NPN

NPN

500mV

1A

63 @ 150mA 2V

100nA ICBO

500mV @ 50mA, 500mA

80V

180MHz

-

80V

100V

5V

-

-

ROHS3 Compliant

-

-

-

-

-

-

NOT SPECIFIED

-

NOT SPECIFIED

-

-

-

NO LEAD

SINGLE

180MHz

-

-

BC56PA,115 vs BC56PASX
BC560_J35Z

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

-

-

150°C TJ

Bulk

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

500mW

-

-

-

PNP

-

-

110 @ 2mA 5V

15nA ICBO

650mV @ 5mA, 100mA

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BC560

100mA

-

-

-

150MHz

TO-92-3

45V

BC56PA,115 vs BC560_J35Z