ON Semiconductor BC517
- Part Number:
- BC517
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2472389-BC517
- Description:
- TRANS NPN DARL 30V 1A TO-92
ON Semiconductor BC517 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC517.
- Lifecycle StatusOBSOLETE (Last Updated: 1 day ago)
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- Weight200mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published2006
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationThrough Hole
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Voltage - Rated DC30V
- Max Power Dissipation625mW
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)240
- Current Rating1.2A
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberBC517
- Pin Count3
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation625mW
- Transistor ApplicationAMPLIFIER
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce30000 @ 20mA 2V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic1V @ 100μA, 100mA
- Collector Emitter Breakdown Voltage30V
- Transition Frequency200MHz
- Collector Emitter Saturation Voltage1V
- Max Breakdown Voltage30V
- Frequency - Transition200MHz
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)10V
- hFE Min30000
- Continuous Collector Current1.2A
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeLead Free
BC517 Description
This BC517 is designed for applications requiring extremely high current gain at currents to 1.0A. BC517 is an NPN Darlington Transistor from the manufacturer of ON Semiconductor with a voltage of 30V. The operating temperature of BC517 is -55°C~150°C TJ and its maximum power dissipation is 625mW. BC517 has 3 pins and it is available in TO-226-3, TO-92-3 (TO-226AA) packaging way.
BC517 Features
Current - Collector Cutoff (Max): 500nA
Collector Emitter Breakdown Voltage: 30V
Collector Emitter Saturation Voltage: 1V
Frequency - Transition: 200MHz
BC517 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
This BC517 is designed for applications requiring extremely high current gain at currents to 1.0A. BC517 is an NPN Darlington Transistor from the manufacturer of ON Semiconductor with a voltage of 30V. The operating temperature of BC517 is -55°C~150°C TJ and its maximum power dissipation is 625mW. BC517 has 3 pins and it is available in TO-226-3, TO-92-3 (TO-226AA) packaging way.
BC517 Features
Current - Collector Cutoff (Max): 500nA
Collector Emitter Breakdown Voltage: 30V
Collector Emitter Saturation Voltage: 1V
Frequency - Transition: 200MHz
BC517 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
BC517 More Descriptions
Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
NPN Bipolar Darlington Transistor
Trans Darlington NPN 30V 1.2A 3-Pin TO-92 Bulk
Small Signal Bipolar Transistor; Transistor Polarity:NPN; DC Current Gain Min (hfe):30000; Package/Case:TO-92; C-E Breakdown Voltage:40V; DC Collector Current:0.4A; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes
DARLINGTON TRANSISTOR, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:625mW; DC Collector Current:400mA; DC Current Gain hFE:30000; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Av Current Ic:400mA; Collector Emitter Voltage Vces:1V; Continuous Collector Current Ic Max:400mA; Current Ic Continuous a Max:400mA; Current Ic hFE:20mA; Device Marking:BC517; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:250MHz; Hfe Min:30000; No. of Transistors:1; Package / Case:TO-92; Pin Configuration:f; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:600mW; Termination Type:Through Hole; Transistor Type:Darlington
NPN Bipolar Darlington Transistor
Trans Darlington NPN 30V 1.2A 3-Pin TO-92 Bulk
Small Signal Bipolar Transistor; Transistor Polarity:NPN; DC Current Gain Min (hfe):30000; Package/Case:TO-92; C-E Breakdown Voltage:40V; DC Collector Current:0.4A; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes
DARLINGTON TRANSISTOR, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:625mW; DC Collector Current:400mA; DC Current Gain hFE:30000; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Av Current Ic:400mA; Collector Emitter Voltage Vces:1V; Continuous Collector Current Ic Max:400mA; Current Ic Continuous a Max:400mA; Current Ic hFE:20mA; Device Marking:BC517; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:250MHz; Hfe Min:30000; No. of Transistors:1; Package / Case:TO-92; Pin Configuration:f; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:600mW; Termination Type:Through Hole; Transistor Type:Darlington
The three parts on the right have similar specifications to BC517.
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ImagePart NumberManufacturerLifecycle StatusMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Contact PlatingTerminal FormReference StandardJESD-30 CodeConfigurationCase ConnectionPolarity/Channel TypeView Compare
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BC517OBSOLETE (Last Updated: 1 day ago)Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3200mgSILICON-55°C~150°C TJBulk2006e0noObsolete1 (Unlimited)3Through HoleTin/Lead (Sn/Pb)Other Transistors30V625mWBOTTOM2401.2A30BC51731NPNSingle625mWAMPLIFIERNPN - Darlington30V1A30000 @ 20mA 2V500nA1V @ 100μA, 100mA30V200MHz1V30V200MHz40V10V300001.2ANo SVHCNoNon-RoHS CompliantLead Free------------
-
--Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)----55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)----------BC517------NPN - Darlington--30000 @ 20mA 2V100nA ICBO1V @ 100μA, 100mA-------------TO-92-3625mW30V1.2A-------
-
-Surface MountSurface Mount3-UDFN Exposed Pad--SILICON150°C TJCut Tape (CT)2014--Discontinued1 (Unlimited)3----420mWDUALNOT SPECIFIED-NOT SPECIFIED-31---SWITCHINGPNP500mV1A63 @ 150mA 2V100nA ICBO500mV @ 50mA, 500mA45V145MHz-45V145MHz45V5V----ROHS3 Compliant--420mW--TinNO LEADAEC-Q101; IEC-60134S-PDSO-N3SINGLECOLLECTORPNP
-
--Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)----55°C~150°C TJBulk---Obsolete1 (Unlimited)----------BC517------NPN - Darlington--30000 @ 20mA 2V100nA ICBO1V @ 100μA, 100mA-------------TO-92-3625mW30V1.2A-------
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