Fairchild/ON Semiconductor BC33725
- Part Number:
- BC33725
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2467443-BC33725
- Description:
- TRANS NPN 45V 0.8A TO-92
- Datasheet:
- BC33725
Fairchild/ON Semiconductor BC33725 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC33725.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingBulk
- JESD-609 Codee1
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN SILVER COPPER
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT APPLICABLE
- Time@Peak Reflow Temperature-Max (s)NOT APPLICABLE
- Pin Count3
- JESD-30 CodeO-PBCY-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max625mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)45V
- Current - Collector (Ic) (Max)800mA
- Transition Frequency100MHz
- Frequency - Transition100MHz
- RoHS StatusROHS3 Compliant
BC33725 Overview
This device has a DC current gain of 160 @ 100mA 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 100MHz.Collector Emitter Breakdown occurs at 45VV - Maximum voltage.
BC33725 Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
a transition frequency of 100MHz
BC33725 Applications
There are a lot of Rochester Electronics, LLC
BC33725 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 160 @ 100mA 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 100MHz.Collector Emitter Breakdown occurs at 45VV - Maximum voltage.
BC33725 Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
a transition frequency of 100MHz
BC33725 Applications
There are a lot of Rochester Electronics, LLC
BC33725 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC33725 More Descriptions
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 160 @ 100mA 1V 800mA 625mW 100MHz
Trans GP BJT NPN 45V 0.8A 625mW 3-Pin TO-92 T/R
RF TRANSISTOR, NPN 45V 100MHZ TO-92; Tra
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics.
RF TRANSISTOR, NPN 45V 100MHZ TO-92; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:45V; Transition Frequency Typ, ft:100MHz; Power Dissipation, Pd:625mW; DC Collector Current:1A; DC Current Gain Max (hfe):400 ;RoHS Compliant: Yes
Trans GP BJT NPN 45V 0.8A 625mW 3-Pin TO-92 T/R
RF TRANSISTOR, NPN 45V 100MHZ TO-92; Tra
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics.
RF TRANSISTOR, NPN 45V 100MHZ TO-92; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:45V; Transition Frequency Typ, ft:100MHz; Power Dissipation, Pd:625mW; DC Collector Current:1A; DC Current Gain Max (hfe):400 ;RoHS Compliant: Yes
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